DMT6015LPS-13 Allicdata Electronics

DMT6015LPS-13 Discrete Semiconductor Products

Allicdata Part #:

DMT6015LPS-13DITR-ND

Manufacturer Part#:

DMT6015LPS-13

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET BVDSS: 41V 60V POWERDI506
More Detail: N-Channel 60V 10.6A (Ta), 31A (Tc) 1.16W (Ta) Surf...
DataSheet: DMT6015LPS-13 datasheetDMT6015LPS-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.24162
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.16W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 30V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMT6015LPS-13 is an advanced semiconductor device primarily used to serve as a switch that couples a low-level control signal with a high-level enable signal. It is a general-purpose enhancement-mode MOSFET (metal oxide semiconductor field-effect transistor) which is marked in various sizes and configurations, but is commonly found in surface mount technology in a standard plastic 16-pin housing (TSSOP), with a drain current of 15A (maximum) and a gate-source voltage of 20V (maximum).

Applications for the DMT6015LPS-13 are best suited in situations where the MOSFET is to be used as a direct switch to control device current flow, as it has very low on-resistance. This makes it an ideal candidate for applications that require power conversion in motor control, consumer electronics like home appliances, gaming consoles, PCs, displays, and related consumer products, as well as industrial equipment such as automation, power supplies, and drive systems.

The working principle of how the DMT6015LPS-13 functions can be broken down into several essential components: the source, the gate, the drain, and the body or substrate. The source and the drain of the MOSFET are two electrodes, or connections, where current travels when it is flowing through the device. The source and the drain are what control the current flow, and when an applied voltage is connected to the drain, current is allowed to flow through the device.

The gate is like a valve, in that it acts as a switch to the source and the drain. It has the ability to pass or block current flow between the source and the drain by changing the electrical connection. When the gate is activated, electrons are attracted from the source electrode and channeled to the drain. This is what allows the device to act as a switch and turn things on or off.

Finally, the body or substrate of the DMT6015LPS-13 acts as a base for the MOSFET. It provides the structure for all the other components, and it is basically a semiconductor material where the essential parts such as the source, the gate, and the drain are housed. The substrate is electrically neutral, and it is what all other components rely on.

To sum up, the DMT6015LPS-13 is a general-purpose enhancement-mode MOSFET that is used predominantly for switching and controlling the current flow of devices. Its primary applications are in motor control, consumer electronics, gaming, industrial equipment, and power conversion, and its working principle depends on four components: the source, the gate, the drain, and the substrate.

The specific data is subject to PDF, and the above content is for reference

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