Allicdata Part #: | DMT6009LFG-7DITR-ND |
Manufacturer Part#: |
DMT6009LFG-7 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 11A |
More Detail: | N-Channel 60V 11A (Ta), 34A (Tc) 2.08W (Ta), 19.2W... |
DataSheet: | DMT6009LFG-7 Datasheet/PDF |
Quantity: | 4000 |
2000 +: | $ 0.30429 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.08W (Ta), 19.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1925pF @ 30V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 33.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 34A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
As the firm hold of technology in our lives become tighter, transistors have gone a long way, particularly in fields where power output is a factor. Transistors in these fields have handled increasingly higher amounts of power, and the position of the MOSFET transistor in them is particularly strong. The particular MOSFET in focus today is the DMT6009LFG-7, which can be used in circuits that require both a high power output as well as a high switching speed.
The DMT6009LFG-7 transistor is a single high side N-channel MOSFET, with a drain voltage readout of 100V, and a steady state drain current capability of up to 3A. This makes it an ideal transistor for applications that need a large current, such as those found in electronic motors. This MOSFET is particularly useful for these applications, for two main reasons. Firstly, because it is an N-channel MOSFET, it can be more easily turned on and off with a gate signal; compared to the P-Channel type, fewer gate signals are needed due to the relative independence from other transistors. Also, N-channel transistors are known to have a relatively low gate threshold, making them very responsive and versatile.
The other benefit of using the DMT6009LFG-7 MOSFET is its ability to work with a wide variety of gate signals, ranging from 4V to 10V. This helps increase the versatility of this MOSFET, allowing it to seamlessly fit in a variety of applications. In addition, the DMT6009LFG-7 can run at speeds of up to 20Mhz due to its efficient switching speed. All these factors make it an ideal transistor for applications that require high power and fast switching capabilities.
While the DMT6009LFG-7 excels in power applications, its working principle also consider circuit and component protection. The MOSFET features a variety of integrated circuit protection protocols that can help protect other transistors and components in case of a malfunction. Heat sinks, thermal sensors and current sense resistors are all present inside the casing of the transistor, helping to manage and regulate the power output. This helps reduce the risk of injury or damage to other components due to excessive current and helps to maintain the power output at a constant level.
In conclusion, the DMT6009LFG-7 is an ideal transistor for applications which require a large amount of power, as well as a high switching speed. Its N-channel architecture and wide range of gate signals make it an incredibly versatile choice for power applications, and its integrated circuit protection protocols make it an ideal choice for protecting components from excess current or voltage. Ultimately, it is a reliable and powerful choice for power applications and will continue to help lead the trend in transistors in this field.
The specific data is subject to PDF, and the above content is for reference
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