DMT6009LK3-13 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMT6009LK3-13 is one of the latest and most cutting-edge mosfets developed by the transistor manufacturer Intersil. The purpose of this article is to discuss the application field and working principles of the DMT6009LK3-13. To that end, this paper will provide information about the characteristics and abilities of the component, as well as how it is used and its most common applications.

Characteristics of the DMT6009LK3-13

The DMT6009LK3-13 is the latest mosfet developed by Intersil. It is a standard width double-diffused metal-oxide semiconductor field-effect transistor (MOSFET), with an N-channel. The mosfet is made of a high-voltage silicon substrate, featuring a 47.5-volt maximum drain-source voltage (VDS). It is designed to provide substantial breakdown voltage and low saturation voltage. The maximum output current that can be handled by the DMT6009LK3-13 is 60A, with the maximum drain-source current (ID) being 40A.

The DMT6009LK3-13 has a total gate charge of 11.2 nano-coulombs (nC) and a gate-to-source saturation voltage of 1.5V. It also features a fast switching time. The mosfet is available as a surface mount device and includes a thermal drain pad to aid in heat dissipation. It has a relatively small footprint dimensions of 4.8 mm x 4.7 mm.

Working principle of the DMT6009LK3-13

As with all MOSFETs, the DMT6009LK3-13 works by allowing current to flow between the source and the drain when a voltage signal is applied to the gate. A mosfet is a voltage-controlled device, meaning that the current flow can be changed by adjusting the voltage signal that is applied to the gate. The increase in the voltage signal at the gate will increase the current flow, while the decrease in the voltage signal at the gate will decrease the current flow. This is known as the “field effect” of the mosfet.

The DMT6009LK3-13 is a 4.8mm by 4.7mm high-voltage mosfet. It is designed to reduce switching losses and Rds-on times. The gate charge of 11.2 nC makes it ideal for high-frequency switching applications, while its low saturation voltage keeps power losses to a minimum. Its thermal drain-pad also allows for improved heat dissipation, and its small footprint makes it suitable for use in space-constrained and high-density circuits.

Application fields of the DMT6009LK3-13

The DMT6009LK3-13 is best suited for high-frequency switching, along with low-design applications. Due to its small footprint, the mosfet can be used in space-constrained and high-density circuits. It is also designed for applications which require long switching durations and high-voltage tolerance. Because of its low saturation voltage and low gate charge, it is suitable for high-loading loads.

It can be used for power converters, motor drives, and solenoid drivers. It can also be used in digital circuits, such as those found in digital signal processing, data acquisition, and control systems. Its fast switching time makes it suitable for use in high-frequency applications, such as radio frequency (RF) transmitters and receivers.

Conclusion

In conclusion, the DMT6009LK3-13 is a high-performance mosfet developed by Intersil. It is a 47.5V rated maximum drain-source voltage MOSFET, with a maximum output current of 60A. Its gate charge of 11.2 nC makes it ideal for high-frequency switching applications, while its low saturation voltage keeps power losses to a minimum. It is best suited for high-frequency switching, along with low-design applications such as power converters, motor drives, and solenoid drivers, as well as for digital circuits, such as those found in digital signal processing, data acquisition, and control systems.

The specific data is subject to PDF, and the above content is for reference