DMT6010LSS-13

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2090pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	41.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMT6010LSS-13 is a high-reliability, high temperature, small signal MOSFET that is suitable for a variety of applications. It has two operating modes: an enhancement mode (enhanced mode) and a depletion mode (Depletion mode). It is an enhancement-mode device and has high saturation current and high transconductance in its working region.In an enhancement mode, the gate of the MOSFET should be kept at a potential higher than the source for it to turn on. When the source reaches zero potential, the device is on and the current starts flowing through the device. The voltage at the gate can be between 0 to 1.5 volts and the current can range from 0 to 1.5 amps. The gate is kept at a potential above the source for it to stay on.In depletion mode, the gate of the MOSFET should be kept at a potential lower than the source for it to turn on. When the source reaches zero potential, the device turns on and the current starts flowing through the device. The voltage at the gate can be between 0 to minus 1.5 volts and the current can range from 0 to minus 1.5 amps. The gate is kept at a potential below the source for it to stay on.The DMT6010LSS-13 can be used in a wide range of applications such as switching power supplies, lighting applications, DC-to-DC converters and so on. It is also suitable for use in avionics and industry control systems. The device has excellent performance in terms of its high frequency switching characteristics and its very low on-resistance. This makes it suitable for high frequency switching applications.The DMT6010LSS-13 is built on a silicon substrate and it has a very low voltage drop (Vdss) of 0.5 V. This is ideal for low voltage operation and reduces power consumption. The device also has high source-drain leakage which gives it high reliability and a long life.The DMT6010LSS-13 is capable of high-frequency operation, from dc to hf frequencies. This enables it to be used in high-frequency applications such as switching power supply applications. It has a high breakdown voltage of 2.5 kV and a wide power range of 0.1 W to 10 W.The device also has a low on-resistance of 22 mW and a high current capability of 12 A. The DMT6010LSS-13 has excellent switching characteristics. It has a fast fully-off response time of 5 ns and a high rise time of only 1 ns. The device is capable of high frequency switching up to 500 Khz and it is highly stable even under large-amplitude signal variations.In summary, the DMT6010LSS-13 is a high-performance, high temperature, small signal MOSFET suitable for a variety of applications. It has two operating modes: enhancement and depletion. Its excellent frequency response, low on-resistance and wide power margin make it suitable for high-frequency switching applications. Its high source-drain leakage and robust design provide a high degree of reliability and long life.

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