DMT68M8LSS-13 Allicdata Electronics
Allicdata Part #:

DMT68M8LSS-13-ND

Manufacturer Part#:

DMT68M8LSS-13

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CHANNEL 60V 28.9A 8SO
More Detail: N-Channel 60V 28.9A (Tc) 1.9W (Ta) Surface Mount 8...
DataSheet: DMT68M8LSS-13 datasheetDMT68M8LSS-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.14655
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2107pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMT68M8LSS-13 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in modern electronic devices. It is a single transistor in the power MOSFET family, meaning it can only switch a single voltage level on and off. The DMT68M8LSS-13 is a low power, low voltage device, typically operating between 0V and 6V. It is designed to minimize power loss, making it ideal for use in power circuits and applications that require high efficiency and low energy losses.

The DMT68M8LSS-13 has a wide range of application fields. Its low power and voltage characteristics make it suitable for use in low voltage circuits, such as car audio systems, LED drivers, and small portable electronics. Its efficient power usage means that it can be used in a variety of power management and switching applications, such as in power supplies, motor controls, and motor drives. Its high speed switching capabilities make it ideal for DC to DC converters, switching rectifiers, and SMPS (switched-mode power supply) applications.

The DMT68M8LSS-13 works on the principle of a metal oxide semiconductor field effect transistor (MOSFET). At the heart of the device is its channel terminal, a conducting channel through which electric current flows. The terminals used to control the flow of current, known as the gate, are then asymmetrically arranged around the channel terminal; these are called the source and drain terminals. The source terminal is biased negatively, while the drain terminal is biased positively.

When a positive voltage is applied to the gate, it forms an electric field that causes electrons to flow from the source terminal to the drain terminal and thus switches the transistor on. This positive voltage is known as the ‘threshold voltage’, and when it is reached, the electrons start flowing from the source to the drain, causing the transistor to turn on. Conversely, when a negative voltage is applied to the gate, it forms an electric field that acts as a barrier to the current flow, thus switching the transistor off.

The DMT68M8LSS-13 is used in many applications thanks to its ability to switch on and off quickly and efficiently. Its low power and voltage requirements mean it is well suited for low power devices, and its high speed switching capability make it a good choice for applications that require high frequency operation or require high efficiency switching. This makes the DMT68M8LSS-13 a highly versatile power MOSFET that is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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