DMT6016LFDF-13 Allicdata Electronics
Allicdata Part #:

DMT6016LFDF-13DI-ND

Manufacturer Part#:

DMT6016LFDF-13

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 8.9A 6UDFN
More Detail: N-Channel 60V 8.9A (Ta) 820mW (Ta) Surface Mount 6...
DataSheet: DMT6016LFDF-13 datasheetDMT6016LFDF-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.13987
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 820mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMF6016LFDF-13 is a N-channel 60V, 26mΩ, 1.2A small-signal MOSFET. It is notably suitable for the applications which require portable and battery-operated electrical appliances, such as handheld instruments and remote controls. With a low gate threshold voltage and a fast switching speed, it offers good performance and reliability.

The DMF6016LFDF-13 is mainly composed of a substrate of semiconductor material with a source and a drain separated by a gate. It works in a “Depletion mode of operation”, which means that an input voltage applied to the gate will drive the junction of the source and drain from a “normally on” to a “normally off” state.

When the gate and the source are both at zero volts, the MOSFET is in a “Saturation” mode, in which the maximum voltage of the drain and the source is VGL. When the voltage of the gate is in between VGSmin and VGH, the MOSFET is in 3 regions of linear region, which differs from SOI-MOSFETs linearly proportional changes of current in the drain with increased voltage.

The DMF6016LFDF-13 is best suited for applications like motor speed controllers, LED drivers, switching power supplies, load switching and charge pumps. The streamlined design of the chip provides a simple solution with excellent electrical characteristics, making it suitable for applications with a high-voltage gain or low-level switching. Since drain-source voltage drops are manageable and low, they are suitable for battery-operated appliances.

This construction not only offers improved current handling capability, but also reduces AC input capacitance and the possibility of oscillation due to the improved RF immunity. Furthermore, the DMF6016LFDF-13 has low power dissipation, an isolated channel construction and an excellent thermal transfer channel connection which allows for a high frequency operation and a stable operation temperature.

The DMF6016LFDF-13 is also packaged in a simple SOT-23-6 package which allows for a wider range of operations and applications due to the flexibility and increased component density. Due to its wide range of applications, the DMF6016LFDF-13 is very valuable and cost effective for biomedical and automotive systems.

The specific data is subject to PDF, and the above content is for reference

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