DMT69M8LSS-13

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DMT69M8LSS-13 is a type of single-gate Field Effect Transistor (FET). It provides low on-state resistance whilst maintaining a 900 volts blocking voltage capability. This FET is intended for use as a high frequency switch in a variety of applications, such as:

• Power converter
• High frequency telecommunications circuits
• DC power converter circuit protection
• Extended temperature range applications
• Motor drive applications

Field effect transistors (FETs) are voltage controlled three-terminal devices where current flows from the drain to the source when a gate voltage is applied. They are used in a variety of electronic circuits, such are amplifiers and switches. FETs are divided into two types: Metal Oxide Semiconductor FETs (MOSFETs) and Junction Field Effect Transistors (JFETs).

The DMT69M8LSS-13 is an N-channel MOSFET which operates in the enhancement mode. It consists of a MOVFET structure which is composed of drain and source metal-oxide-semiconductor (MOS) layers grown on a heavily doped and insulated semiconductor substrate. The MOVFET structure is designed to reduce the effects of short channel variations thereby allowing superior switching performance and improved high temperature reliability.

The DMT69M8LSS-13 has novel features that make it different from traditional MOSFETs, as it has an integrated Prebias feature. This integrated feature is designed to enhance the FET’s performance when used in both ultra-low-branch and high-speed-switching applications. Basically, the prebias feature allows the FET to perform more efficiently with the gate voltage already applied, providing better dynamic behavior, enhanced immunity to noise and a shorter turn on time. This improves the overall switching efficiency of the FET, enabling it to reduce power losses while handling high currents and temperatures.

The DMT69M8LSS-13 is a highly suitable FET for various applications, mainly due to its low on-state resistance, blocking voltage of up to 900V, high frequency capabilities, improved noise reduction and higher immunity to surge voltages. It is a very reliable and efficient switch, which has been tested and proven to be highly reliable and provide high performance in a variety of applications.

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