| Allicdata Part #: | DMT6007LFG-13-ND |
| Manufacturer Part#: |
DMT6007LFG-13 |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET BVDSS: 41V 60V POWERDI333 |
| More Detail: | N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W ... |
| DataSheet: |  DMT6007LFG-13 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.33026 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | PowerDI3333-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta), 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2090pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41.3nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 80A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The DMT6007LFG-13 is a depletion-mode metal oxide semiconductor field-effect transistor (MOSFET) in a low profile surface-mount package. It is designed to provide superior performance when used as a switch or level translator in a variety of digital and analogue applications. This article will discuss the application field of the DMT6007LFG-13, as well as its working principle.The DMT6007LFG-13 is suitable for a variety of applications, such as level translation, power supply control and switching, load driving and amplifier operations. It has very low on-resistance and very high speed, which makes it suitable for high-performance digital and analogue applications. It can also be used as a voltage regulator, as its drain-source resistance can be adjusted to control the current flow.In terms of its working principle, the DMT6007LFG-13 is a depletion-mode MOSFET. This means that when an electric field is applied to its gate, holes, which are negatively charged particles, will be attracted to the gate, thus further reducing the amount of current that can flow between the source and drain. As a result, the drain-source voltage will increase, eventually leading to the MOSFET’s ‘On’ state, in which current can flow freely.To ensure that the MOSFET remains in the ‘On’ state, the gate must be connected to a positive voltage source. This voltage source must be able to provide sufficient current to the gate in order to maintain the field, thus keeping the MOSFET in the ‘On’ state.The DMT6007LFG-13 also has a number of protection features which help to ensure its reliability and performance. These include reverse-bias protection, which ensures that reverse currents are limited and will not cause damage to the device. The MOSFET also has an under-voltage lockout protection, which prevents the device from operating if the gate voltage is too low.In conclusion, the DMT6007LFG-13 is a low-profile, high-performance depletion-mode MOSFET which is suitable for a wide range of applications. It has a number of protection features which help to ensure reliability, and its drain-source resistance can be adjusted to control the current flow. As such, the DMT6007LFG-13 is a highly versatile device that is well suited for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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