DMT6008LFG-13

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 41W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2713pF @ 30V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	50.4nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMT6008LFG-13 Application Field and Working Principle

Introduction

The DMT6008LFG-13 from ON Semiconductor is a 60 V N-channel power MOSFET. This MOSFET is comprised of a monolithically integrated N-channel power MOSFET with a low-voltage P-channel field-effect transistor (FET). This MOSFET is designed for applications such as automotive load switch MOSFETs, load switch MOSFETs for server application, gate drivers, and gate drivers for synchronous rectifiers in power converters.The features of the DMT6008LFG-13 include low gate charge Qg, low on-resistance SC(ON), extremely low reverse transfers RDS(ON), elevated channel temperature rating TCh, and high peak current.

Application Fields of DMT6008LFG-13

The DMT6008LFG-13 can be used in a variety of applications. The features discussed above allow it to be used in a number of different applications such as:

• Automotive Load Switch MOSFETs
• 3V and 5V Gate Drivers
• Load Switch MOSFETs for Server Application
• Gate Drivers for Synchronous Rectifiers in Power Converters
• High Side Switches

The DMT6008LFG-13 is designed for use in High Side Switches that require low drain-to-source on-resistance (RDS(ON)) and a low gate charge (Qg), such as Automotive Load Switch MOSFETs, Gate Drivers, and Synchronous Rectifiers. The low RDS(ON) is critical in these applications because it is the cause of low power consumption in the system. The low gate charge is necessary to reduce energy losses due to switching on and off the MOSFET.

Working Principle of DMT6008LFG-13

The working principle of the DMT6008LFG-13 MOSFET is based on a field-effect transistor that consists of a source, drain, and gate. When a voltage is applied to the gate, a current flows from the source to the drain, and the drain-source voltage is reduced. When the gate voltage is removed, the drain-source voltage increases, and the current stops flowing.The DMT6008LFG-13 is designed with an insulated-gate that is constructed from a layer of silicon dioxide (SiO2). This insulated layer separates the gate from the channel, creating a barrier that allows for much higher voltages to be applied to the gate than would be possible with conventional MOSFETs. This allows for the DMT6008LFG-13 to handle much higher drain-source voltages than conventional MOSFETs.The DMT6008LFG-13 also features a monolithically integrated N-channel power MOSFET with a low-voltage P-channel FET. This combination allows for a low on-resistance SC(ON) that is essential in high power applications, such as automotive loads and servers, while simultaneously providing a low gate charge Qg that is essential in increasing the efficiency of the system.

Conclusion

The DMT6008LFG-13 from ON Semiconductor is an N-channel power MOSFET designed for applications in automotive load switch MOSFETs, load switch MOSFETs for server application, gate drivers, and gate drivers for synchronous rectifiers in power converters. It features a high peak current and temperature rating along with low gate charge Qg and low on-resistance SC(ON). The working principle of the DMT6008LFG-13 is based on a field-effect transistor that consists of a source, drain, and gate, with an insulated-gate that is constructed from a layer of silicon dioxide (SiO2). This insulated layer allows for much higher voltages to be applied to the gate than would be possible with conventional MOSFETs, and the combination of a monolithically integrated N-channel power MOSFET with a low-voltage P-channel FET allows the DMT6008LFG-13 to be used in high power applications.

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