Allicdata Part #: | DMT6016LSS-13DITR-ND |
Manufacturer Part#: |
DMT6016LSS-13 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 9.2A 8-SOIC |
More Detail: | N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-... |
DataSheet: | DMT6016LSS-13 Datasheet/PDF |
Quantity: | 22500 |
2500 +: | $ 0.13476 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 864pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.2A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT6016LSS-13 is a single N-Channel Enhancement Mode, Field Effect Transistor (FET). Specifically, this particular device is a low-side high-voltage protected n-channel MOSFET. The device primarily functions as a switch, allowing current to flow in one direction through it, while preventing current from flowing in the other direction. As such, the DMT6016LSS-13 is used in a variety of applications, such as lighting, power monitoring, and current regulation, among other uses.
In terms of its physical and electrical characteristics, the DMT6016LSS-13 is a relatively small device, measuring just 4.2 mm x 6.0 mm x 0.85 mm. It is also very efficient, having a low gate charge (Qg) of only 10 nC, a total gate charge (Qgs) of only 14 nC, and a gate-source capacitance (Cgs) of only 1.4 pF. In terms of its electrical characteristics, the DMT6016LSS-13 is rated for a drain-source voltage (Vds) of up to 350V, a drain-source current (Id) of up to 2A, a power dissipation (Pd) of up to 1.5W, and a maximum avalanche energy (Eas) of 225 mJ. As such, it is suitable for use in a wide variety of applications.
The working principle of the DMT6016LSS-13 is based on basic electrostatics and electron flow. Electron flow is controlled, in this case, by varying the amount of voltage applied to the gate using a power supply. When no voltage is applied to the gate, the transistor is in the "off" state and no current can flow between the source and drain. When voltage is applied, the gate attracts electrons and forms an "inverse" electrically charged field which sweeps away electrons from the source and causes them to enter the drain, thus allowing current to flow between the two terminals. This voltage is known as the "gate-source voltage" (Vgs), and it is this voltage which allows current to flow through the device and makes it function as an on/off switch.
The DMT6016LSS-13 can be used in a variety of applications, including lighting, motor control, and power supply regulation, among others. In motor control applications, for example, the DMT6016LSS-13 can be used to control the speed and direction of the motor, as well as adjusting its current and voltage requirements. In lighting applications, it can be used as a light dimmer or switch, while in power supply regulation it can be used to adjust the output power and current levels. In addition, the device can also be used as a switch to regulate the current and voltage flow of a circuit.
Overall, the DMT6016LSS-13 is a highly efficient, reliable, and cost-effective N-channel MOSFET. Its low gate charge, small form factor, and high breakdown voltage make it suitable for a variety of applications, ranging from lighting control and motor control to power supply regulation and current regulation. Its simple working principle makes it easy to use and understanding, and its low cost makes it an attractive option for many users. As such, the DMT6016LSS-13 is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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