
Allicdata Part #: | DMT6005LPS-13DITR-ND |
Manufacturer Part#: |
DMT6005LPS-13 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CHA 60V 17.9A POWERDI |
More Detail: | N-Channel 60V 17.9A (Ta), 100A (Tc) 2.6W (Ta), 125... |
DataSheet: | ![]() |
Quantity: | 2500 |
2500 +: | $ 0.31443 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.6W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2962pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47.1nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17.9A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
DMT6005LPS-13 is a high-current, low gate-charge, low on-resistance, N-Channel field-effect transistor (FET) with advanced process technology. It is manufactured for a variety of applications and has the ability to operate in both rectangular and linear modes. This makes the device popular for high current power applications, such as switching power supplies, and can handle up to 50 amperes of current with a typical drain-source on-resistance of just 0.068 ohms.
A FET is an active electronic device that can be used to control the on/off state or current flow in a circuit. It consists of a semiconductor channel that can be either polarized or unpolarized. When the gate voltage is positive, conduction takes place between the source and drain electrodes, allowing the flow of current between them. Conversely, when the gate voltage is negative, no current flows between the source and drain electrodes. FETs are widely used in circuits where both low input currents and high output currents are required.
The DMT6005LPS-13 is an N-Channel FET that has been designed with a low gate-charge and very low on-resistance in order to minimize power loss and increase efficiency. Its low gate-charge allows it to be driven with a wide range of voltages, while its low on-resistance delivers higher current flow with minimal loss. Additionally, the DMT6005LPS-13’s advanced process technology makes it highly reliable for both high-current and high-temperature applications.
The DMT6005LPS-13’s working principle is relatively simple: when a voltage is applied to the gate electrode, it temporarily inverts the P-type semiconductor channel of the FET to an N-type channel. As a result, the kinetic energy of the electrons causes them to be driven from the source to the drain, resulting in the flow of electrical current. This process is known as electrification. When the voltage is removed, the P-type channel is restored and the current stops flowing.
Due to its low on-resistance and advanced process technology, the DMT6005LPS-13 is a popular choice for applications such as switching power supplies, computer power supplies and voltage regulation. It is also suitable for use in battery chargers, audio amplifiers, automotive systems, power converters and lighting systems. In addition, its high-efficiency operation and wide operating temperature range make it suitable for use in industrial and outdoor applications.
The DMT6005LPS-13 is a highly-reliable, low gate-charge, N-Channel FET that has been designed for a variety of applications. By providing high current flow with low power loss, and being suitable for a wide range of operating temperatures, the DMT6005LPS-13 is a popular choice for applications such as switching power supplies and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
DMT6018LDR-7 | Diodes Incor... | 0.18 $ | 1000 | MOSFET BVDSS: 41V 60V V-D... |
DMT6009LSS-13 | Diodes Incor... | 0.3 $ | 7500 | MOSFET BVDSS: 41V 60V,SO-... |
DMT6012LSS-13 | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V8SOICN-Cha... |
DMT6002LPS-13 | Diodes Incor... | 0.6 $ | 1000 | MOSFET N-CH 60V 100A POWE... |
DMT6009LK3-13 | Diodes Incor... | 0.3 $ | 1000 | MOSFET BVDSS: 41V 60V TO2... |
DMT6D1K | Cornell Dubi... | 0.0 $ | 1000 | CAP FILM 1000PF 10% 630VD... |
DMT6018LDR-13 | Diodes Incor... | 0.16 $ | 1000 | MOSFET 2 N-CH 60V 11.4A D... |
DMT6007LFG-7 | Diodes Incor... | 0.34 $ | 2000 | MOSFET BVDSS: 41V 60V POW... |
DMT6009LPS-13 | Diodes Incor... | 0.34 $ | 1000 | MOSFET N-CHA 60V 10.6A PO... |
DMT6D47K-F | Cornell Dubi... | 0.83 $ | 897 | CAP FILM 4700PF 10% 630VD... |
DMT6017LSS-13 | Diodes Incor... | 0.19 $ | 1000 | MOSFET N-CHA 60V 9.2A SO8... |
DMT6005LSS-13 | Diodes Incor... | 0.5 $ | 1000 | MOSFET N-CHA 60V 13.5A SO... |
DMT6004LPS-13 | Diodes Incor... | 0.49 $ | 1000 | MOSFET N-CH 60V 22AN-Chan... |
DMT6015LFV-7 | Diodes Incor... | 0.16 $ | 1000 | MOSFET NCH 60V 9.5A POWER... |
DMT69M8LFV-7 | Diodes Incor... | 0.21 $ | 1000 | MOSFET N-CH 60V 45A POWER... |
DMT6015LFV-13 | Diodes Incor... | 0.16 $ | 1000 | MOSFET NCH 60V 9.5A POWER... |
DMT6015LSS-13 | Diodes Incor... | 0.21 $ | 1000 | MOSFET N-CHA 60V 9.2A SO8... |
DMT6009LCT | Diodes Incor... | 0.7 $ | 1000 | MOSFET N-CHA 60V 37.2A TO... |
DMT6015LPS-13 | Diodes Incor... | 0.27 $ | 1000 | MOSFET BVDSS: 41V 60V POW... |
DMT6010LSS-13 | Diodes Incor... | 0.42 $ | 1000 | MOSFET BVDSS: 41V 60V SO-... |
DMT6D33K-F | Cornell Dubi... | 0.74 $ | 2350 | CAP FILM 3300PF 10% 630VD... |
DMT6004SCT | Diodes Incor... | 1.51 $ | 44 | MOSFET N-CH 60V 100A TO22... |
DMT6016LPS-13 | Diodes Incor... | 0.18 $ | 12500 | MOSFET N-CH 60V 10.6A POW... |
DMT6010SCT | Diodes Incor... | 1.11 $ | 18 | MOSFET N-CHA 60V 98A TO22... |
DMT6P1K | Cornell Dubi... | 0.0 $ | 1000 | CAP FILM 0.1UF 10% 630VDC... |
DMT6010LPS-13 | Diodes Incor... | 0.32 $ | 1000 | MOSFET N-CH 60V 13.5AN-Ch... |
DMT6016LSS-13 | Diodes Incor... | 0.15 $ | 22500 | MOSFET N-CH 60V 9.2A 8-SO... |
DMT68M8LSS-13 | Diodes Incor... | 0.16 $ | 1000 | MOSFET N-CHANNEL 60V 28.9... |
DMT69M8LFV-13 | Diodes Incor... | 0.21 $ | 1000 | MOSFET N-CH 60V 45A POWER... |
DMT6010LFG-13 | Diodes Incor... | 0.26 $ | 1000 | MOSFET N-CH 60V 13A POWER... |
DMT6008LFG-7 | Diodes Incor... | 0.22 $ | 1000 | MOSFET N-CH 60V 13A PWDI3... |
DMT6P1K-F | Cornell Dubi... | 0.0 $ | 1000 | CAP FILM 0.1UF 10% 630VDC... |
DMT6005LPS-13 | Diodes Incor... | 0.35 $ | 2500 | MOSFET N-CHA 60V 17.9A PO... |
DMT6009LFG-7 | Diodes Incor... | 0.34 $ | 4000 | MOSFET N-CH 60V 11AN-Chan... |
DMT69M8LSS-13 | Diodes Incor... | 0.26 $ | 1000 | MOSFET BVDSS: 41V 60V,SO-... |
DMT6005LCT | Diodes Incor... | 1.11 $ | 1000 | MOSFET NCH 60V 100A TO220... |
DMT6012LPS-13 | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V POWERDI |
DMT6016LFDF-7 | Diodes Incor... | 0.16 $ | 15000 | MOSFET N-CH 60V 8.9A 6UDF... |
DMT6010LFG-7 | Diodes Incor... | 0.22 $ | 1000 | MOSFET N-CH 60V 13A POWER... |
DMT69M8LPS-13 | Diodes Incor... | 0.35 $ | 1000 | MOSFET N-CHA 60V 10.2A PO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
