DMT6005LPS-13 Allicdata Electronics
Allicdata Part #:

DMT6005LPS-13DITR-ND

Manufacturer Part#:

DMT6005LPS-13

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CHA 60V 17.9A POWERDI
More Detail: N-Channel 60V 17.9A (Ta), 100A (Tc) 2.6W (Ta), 125...
DataSheet: DMT6005LPS-13 datasheetDMT6005LPS-13 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.31443
Stock 2500Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMT6005LPS-13 is a high-current, low gate-charge, low on-resistance, N-Channel field-effect transistor (FET) with advanced process technology. It is manufactured for a variety of applications and has the ability to operate in both rectangular and linear modes. This makes the device popular for high current power applications, such as switching power supplies, and can handle up to 50 amperes of current with a typical drain-source on-resistance of just 0.068 ohms.

A FET is an active electronic device that can be used to control the on/off state or current flow in a circuit. It consists of a semiconductor channel that can be either polarized or unpolarized. When the gate voltage is positive, conduction takes place between the source and drain electrodes, allowing the flow of current between them. Conversely, when the gate voltage is negative, no current flows between the source and drain electrodes. FETs are widely used in circuits where both low input currents and high output currents are required.

The DMT6005LPS-13 is an N-Channel FET that has been designed with a low gate-charge and very low on-resistance in order to minimize power loss and increase efficiency. Its low gate-charge allows it to be driven with a wide range of voltages, while its low on-resistance delivers higher current flow with minimal loss. Additionally, the DMT6005LPS-13’s advanced process technology makes it highly reliable for both high-current and high-temperature applications.

The DMT6005LPS-13’s working principle is relatively simple: when a voltage is applied to the gate electrode, it temporarily inverts the P-type semiconductor channel of the FET to an N-type channel. As a result, the kinetic energy of the electrons causes them to be driven from the source to the drain, resulting in the flow of electrical current. This process is known as electrification. When the voltage is removed, the P-type channel is restored and the current stops flowing.

Due to its low on-resistance and advanced process technology, the DMT6005LPS-13 is a popular choice for applications such as switching power supplies, computer power supplies and voltage regulation. It is also suitable for use in battery chargers, audio amplifiers, automotive systems, power converters and lighting systems. In addition, its high-efficiency operation and wide operating temperature range make it suitable for use in industrial and outdoor applications.

The DMT6005LPS-13 is a highly-reliable, low gate-charge, N-Channel FET that has been designed for a variety of applications. By providing high current flow with low power loss, and being suitable for a wide range of operating temperatures, the DMT6005LPS-13 is a popular choice for applications such as switching power supplies and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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