| Allicdata Part #: | DMT6012LSS-13-ND |
| Manufacturer Part#: |
DMT6012LSS-13 |
| Price: | $ 0.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 60V8SOIC |
| More Detail: | N-Channel 60V 10.4A (Ta) 1.2W (Ta) Surface Mount 8... |
| DataSheet: | DMT6012LSS-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.24000 |
| 10 +: | $ 0.23280 |
| 100 +: | $ 0.22800 |
| 1000 +: | $ 0.22320 |
| 10000 +: | $ 0.21600 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1522pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 22.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10.4A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The DMT6012LSS-13 is a single-channel metal-oxide-semiconductor field-effect transistor or MOSFET. It is designed specifically for linear power conversions and offers superior dynamic performance. This device provides an efficient and cost-effective solution for power conversion applications such as AC-DC and DC-DC power converters. It offers improved power density, greater current handling capability, and higher efficiency compared to other devices in its class.The DMT6012LSS-13 is a two-terminal N-channel enhancement-mode MOSFET that has low static and switching power dissipation. It consists of an insulated-gate field-effect transistor with a source terminal, a drain terminal, and a gate terminal. The device follows this type of circuit symbol:
The DMT6012LSS-13 is an enhancement-mode MOSFET, which means that no gate bias voltage is required for the device to conduct current. The device’s drain current is proportional to the gate-source voltage, allowing for exact control of the drain current. The device is available in the following package types: surface mount, through hole, and leadless.The operating temperature range of the DMT6012LSS-13 is -55°C to +125°C. It has a drain-source breakdown voltage of 30V and a maximum drain current of 13A. The maximum power dissipation rating of the device is 8 watts. The package of the device is RoHS compliant and lead-free.The device has a maximum junction temperature of +150°C and a maximum drain source-on voltage of 21V. The DMT6012LSS-13 also has a fast switching time of less than 120 nanoseconds. The device has a high drain current and is therefore suitable for driving high-power applications.The DMT6012LSS-13 can be used in a variety of applications, including AC-DC and DC-DC power converters, lighting, and motor controllers. Additionally, the device can be used in other high-power, high-current applications such as DC-AC inverters, chargers, and uninterruptible power supplies.The DMT6012LSS-13 is a versatile device that offers superior performance and reliability in demanding power conversion applications. Its low on-resistance and high current-handling capability make it a cost-effective solution for a variety of power conversion applications. Its high switching frequency and fast switching time enable it to achieve higher efficiency and allow it to deliver greater power density. The device is also designed to withstand harsh operating environments, making it suitable for a wide range of industrial and consumer applications.The specific data is subject to PDF, and the above content is for reference
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DMT6012LSS-13 Datasheet/PDF