
DMT6008LFG-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMT6008LFG-7DITR-ND |
Manufacturer Part#: |
DMT6008LFG-7 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 13A PWDI3333-8 |
More Detail: | N-Channel 60V 13A (Ta), 60A (Tc) 2.2W (Ta), 41W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.21011 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta), 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2713pF @ 30V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 50.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 60A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT6008LFG-7 is a widely used Field Effect Transistor (FET) in the electronics industry. It is part of the family of MOSFETs and is a single channel device. This type of FET has been designed for unparalleled performance in high-speed switching applications.
MOSFETs use a three-terminal configuration which makes them ideal for use in a variety of circuit configurations. The three terminals are Gate (G), Drain (D) and Source (S). The Gate is the control element that regulates the flow of electrical current, the Drain and Source allow the flow of current between them, when the Gate is activated. This type of configuration works on the principle of capacitance, which is the ability of an electrical conductor to store and release a charge when an external electric field is applied.
The DMT6008LFG-7 specifically has been designed for use in high-speed switching applications. It exhibits excellent thermal stability, low input capacitance, low on-resistance, low switching energy losses and is ideal for high frequency switching applications. This FET is rated at 8 Amperes of DC current and has an on-resistance that remains constant up to 20V.
Due to its compact size, low on-resistance and low-voltage operation, the DMT6008LFG-7 is ideal for a wide range of applications, including audio integration circuits, pulse-width-modulated (PWM) DC/DC converters, clock generation circuits, power supply voltage supervisor circuits and high-speed logic gates. The FET has been designed to work in temperatures ranging from -40°C to +125°C, so it can be used for applications requiring high temperature operation.
The DMT6008LFG-7 can be used in a wide range of High Frequency Switching (HFS) applications. It exhibits very low input capacitance, high control-to-drain isolation, low switching times and excellent thermal stability, making it ideal for many types of applications. The FET has a maximum DC current rating of 8 Amperes and an on-resistance that remains constant up to 20V. This makes it an ideal solution for applications where high voltage operation is required.
In addition to its performance characteristics, the DMT6008LFG-7 also has a low thermal resistance. This ensures that the device not only works reliably, but also that it dissipates heat more efficiently. This increases the device’s overall reliability and extends its operating life. The FET’s low thermal resistance also allows it to be used in a wider range of applications, due to its ability to operate in high temperature environments.
The DMT6008LFG-7 is an ideal solution for a wide range of high-speed switching applications. This FET has been designed for excellent thermal stability, low input capacitance, low on-resistance and low switching energy losses. It is rated at 8 Amperes of DC current and has an on-resistance that remains constant up to 20V. Its small size, low thermal resistance and low voltage operation make it ideal for applications such as audio integration circuits, pulse-width-modulated DC/DC converters, clock generation circuits, power supply voltage supervisor circuits and high-speed logic gates.
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