DMT6002LPS-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMT6002LPS-13 is an N-channel MOSFET transistor with a maximum drain to source breakdown voltage of 600V and a maximum drain continuous current of 2.3A. This device is often used in high-current and high-voltage switching applications and is most commonly found in automotive applications, motor controllers, and audio power amplifiers.

The transistor is a three-terminal device consisting of a source, gate and drain. In the simplest terms, current passes through the transistor when the voltage present at the gate is greater than the threshold voltage and less than the breakdown voltage. This voltage difference is called the gate-source voltage (Vgs). When Vgs exceeds the threshold voltage, current can begin to pass through the transistor. The amount of current that passes depends on the Vgs and the drain-source voltage (Vds). As the drain-source voltage increases, current will also increase until it reaches its peak value, after which it will remain constant. Used primarily in switching applications, the DMT6002LPS-13 is capable of operating in both enhancement and depletion modes.

In enhancement mode, the transistor is off until a gate-source voltage greater than the threshold voltage is applied. When this voltage is applied, current is allowed to pass through the device. The gate-source voltage determines the amount of current that is allowed to pass and this current is known as the enhancement-mode drain current (IED). As the gate-source voltage increases, the current increases until it reaches its maximum drain current (IDmax).

In depletion mode, the transistor is on and current can pass even without the presence of a gate-source voltage. This current is known as the depletion-mode drain current (IDD). As the gate-source voltage is increased, the current increases until it reaches its maximum current, after which it remains constant.

The DMT6002LPS-13 is designed to be used in applications where high-current, high-voltage switching is required. It is particularly well-suited for use in automotive applications, motor controllers, and audio power amplifiers. In these applications, the transistor can be used to switch large currents quickly and efficiently while also providing protection against overloads and short circuits. The device is also available in a thermally improved package, providing improved heat dissipation and reducing the need for external cooling.

In summary, the DMT6002LPS-13 is an N-channel MOSFET transistor with a maximum drain to source breakdown voltage of 600V and a maximum drain continuous current of 2.3A. It is used in high-current and high-voltage switching applications, particularly in automotive applications, motor controllers, and audio power amplifiers. The transistor can operate in both enhancement and depletion modes and is available in a thermally improved package for improved heat dissipation.

The specific data is subject to PDF, and the above content is for reference