
Allicdata Part #: | DMT6010SCTDI-5-ND |
Manufacturer Part#: |
DMT6010SCT |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CHA 60V 98A TO220 |
More Detail: | N-Channel 60V 98A (Tc) 2.3W (Ta), 104W (Tc) Throug... |
DataSheet: | ![]() |
Quantity: | 18 |
1 +: | $ 1.01430 |
50 +: | $ 0.81144 |
100 +: | $ 0.71001 |
500 +: | $ 0.55062 |
1000 +: | $ 0.43470 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1940pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 98A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMT6010SCT is a type of single field effect transistor (FET) that is used to control the flow of electricity across a circuit. It consists of a single conductive gate that is surrounded by an insulated gate oxide layer. The gate is used to regulate the flow of current by applying a potential across the gate, thus changing the resistance in the channel between the source and drain electrodes.
DMT6010SCT transistors can be used in a wide variety of applications. They are often used in power electronics applications, such as motor controls, DC-DC converters and AC inverters. They are also used in switch mode power supplies, power factor correction circuits, voltage regulators, and high frequency switching for communications and data processing. In addition, DMT6010SCT transistors are used in RF power amplifier designs, as well as in medical and automotive applications.
The working principle of the DMT6010SCT is relatively simple. When a voltage is applied to the gate electrode, an electric field is created that attracts electrons in the channel region between the source and drain electrodes. This increases the conduction between the source and drain, and reduces the resistance in the channel. When the gate voltage is reduced, the electric field is weakened and the current between the source and drain reduces.
The most important factor when selecting a DMT6010SCT transistor is the power rating. This is determined by its maximum drain-source voltage (VDS), maximum DC current (IDC) and peak pulse current (IPP) ratings. It is also important to select a transistor with a suitable maximum gate-source voltage (VGS) rating, as this dictates how large the electric field can be before the transistor begins to breakdown. Finally, the junction temperature (TJ) should also be considered to ensure that the device can handle the required power without overheating.
In conclusion, the DMT6010SCT is a versatile and reliable single FET transistor that is suitable for a wide range of applications. Its relatively low cost and simple operating principle make it a popular choice for many power electronics projects. Careful consideration should be given to the various parameters such as the power rating, VDS, IDC, IPP and VGS ratings, as well as the junction temperature when selecting this device.
The specific data is subject to PDF, and the above content is for reference
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