DMT6009LPS-13 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DMT6009LPS-13, also known as a dual N-Channel MOSFET, is a semiconductor device commonly used in electronic circuits. It helps to regulate the flow of current in a circuit by responding to a certain electrical or thermal signal. It is an important component in a variety of applications, including automotive, industrial, and consumer electronics.

This MOSFET is manufactured using advanced process selections to create a device that can handle higher current capabilities, faster switching speeds, and lower power losses. In addition, its low on-resistance maximizes efficiency and power, while its simplified manufacturing process reduces production costs. It offers high performance while helping to reduce energy costs and minimize environmental impacts.

DMT6009LPS-13 is suitable for a variety of power management applications with its wide range of features. It can be used for power switches, automotive power distribution, auxiliary power regulation, and power system protection, as well as industrial equipment and consumer electronics applications. With its low on-resistance, it is ideal for designs with high current requirements.

The DMT6009LPS-13 is a N-Channel MOSFET with an on-resistance of 1.35 Ohm typ. and a maximum of 2.1 Ohm. When the voltage between the gate and source terminals is above the threshold voltage, the drain and source terminals will be able to conduct current, allowing the device to be used as a switch. This type of device is called an enhancement-Type MOSFET.

A typical application of this device is to use it as a switching element in a power supply circuit. The voltage across the drain and source terminals is applied to the load, while the voltage on the gate terminal determines the resistance between the drain and source terminals. When the gate voltage is below the threshold voltage, the drain and source terminals will be at 0v, not allowing any current to pass through the device. When the gate voltage is increased, the resistive path between the drain and source terminals will become smaller, allowing current to flow through the device and to the load.

The DMT6009LPS-13 is also ideal for high-current applications due to its low on-resistance, which reduces power loss in the circuit. This device can be used in high frequency applications, which require devices with low capacitance and low charging time. It can also be used in low-noise applications due to its low-noise characteristics.

The DMT6009LPS-13 has a variety of advantages, such as its small size, low on-resistance, low leakage current, and simplified manufacturing process. Its design allows it to be used in a wide variety of applications, from automotive, industrial, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference