DMTH3004LK3-13 Allicdata Electronics
Allicdata Part #:

DMTH3004LK3-13DITR-ND

Manufacturer Part#:

DMTH3004LK3-13

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 21A TO252
More Detail: N-Channel 30V 21A (Ta), 75A (Tc) 1.9W (Ta) Surface...
DataSheet: DMTH3004LK3-13 datasheetDMTH3004LK3-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.31190
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are versatile devices used in a wide range of applications. One of the most popular is the DMTH3004LK3-13, which is a high performance MOSFET designed for switching and linear applications, as well as power management applications. The DMTH3004LK3-13 is a single MOSFET. This article will explain the applications and working principle of the DMTH3004LK3-13.

The DMTH3004LK3-13 is designed to be used in power and switching applications. It has a wide gate-source voltage range of 5V to 24V, allowing it to operate with a variety of power sources and switching applications. The high current capability of the DMTH3004LK3-13 makes it ideal for high power applications, such as motor control, switching power supplies, and high-end audio applications. The DMTH3004LK3-13 also has a high figure of merit and a low gate threshold voltage, making it suitable for linear applications and high speed switching. Additionally, the DMTH3004LK3-13 is packaged in a D-PAK TO-220 compatible form factor, making it space-efficient for a wide range of applications.

Furthermore, the DMTH3004LK3-13 has a rugged and reliable silicon-oxide passivated vertical DMOS structure. This allows it to be highly-resistant to electrical breakdown, with a channel resistance rating of 18mΩ to 5.6V. This makes the DMTH3004LK3-13 useful for a variety of power management applications, particularly when paired with a suitable controller.

The working principle of the DMTH3004LK3-13 is based on its silicon-oxide passivated vertical DMOS structure. This structure allows it to control a large number of electrons passing through its central channel. This process is known as “channel formation” and it begins when a voltage is applied to the gate terminal. The electrons passing through the channel are then negatively-charged, which creates a barrier between the source and drain of the transistor. This barrier is known as the “channel pinch-off voltage” and it determines the amount of current that can pass through the transistor.

The DMTH3004LK3-13 is therefore suitable for both linear applications and switching applications. It is especially useful in power management applications, due to its low gate threshold voltage and its high figure of merit. The DMTH3004LK3-13 is also space-efficient, making it suitable for a range of applications. Therefore, the DMTH3004LK3-13 is one of the most popular MOSFETs for use in power and switching applications.

The specific data is subject to PDF, and the above content is for reference

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