Allicdata Part #: | DMTH6005LPSQ-13DITR-ND |
Manufacturer Part#: |
DMTH6005LPSQ-13 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 100A POWERDI506 |
More Detail: | N-Channel 60V 20.6A (Ta), 100A (Tc) 3.2W (Ta), 150... |
DataSheet: | DMTH6005LPSQ-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.46252 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2962pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.6A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMTH6005LPSQ-13 is a field effect transistor (FET) designed and manufactured by NXP Semiconductors. The device is a single, dual-gate N-channel FET, designed for use in diverse applications from general purpose switching to voltage-controlled oscillators (VCOs). The device features low-noise and low-distortion performance, which makes it ideal for many applications.
The DMTH6005LPSQ-13 is composed of two independent MOSFETs that are connected in parallel. Each MOSFET has two separate Gates and Sources, making it a dual gate N-channel FET. The dual-gate design gives the device higher input impedance and better switching characteristics. The capacitance between the Gates and Sources is also low, allowing for higher speeds and better performance.
In terms of its application field, the DMTH6005LPSQ-13 is typically used in general purpose switching, such as for transistor-transistor logic (TTL) or complementary metal-oxide-semiconductor (CMOS) circuits. It can also be used for voltage-controlled oscillators (VCOs), frequency modulators, and signal processing circuits. Its low-distortion and low-noise characteristics make it well-suited for signal processing circuits that are sensitive to noise. The device is also used in power management applications, such as in switching regulators and DC-DC converters.
In terms of its Working Principle, the DMTH6005LPSQ-13 functions as any other FET. The current flowing in the channel between the source and drain is controlled by the voltage applied to the gates. When the gates are at a low voltage, the channel is open and current flows; when the gates are at a high voltage, the channel is closed and no current flows. This type of current control is known as field-effect control, and is the defining feature of the FET.
The DMTH6005LPSQ-13 is a versatile and reliable FET that can be used for many different applications. Its dual-gate design offers better input impedance, which allows for better switching performance. Its low-noise, low-distortion characteristics also make it well-suited for use in signal processing and switching applications. This makes the DMTH6005LPSQ-13 an ideal choice for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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