DMTH8012LPSQ-13

Introduction

The DMTH8012LPSQ-13 is a MOSFET in the DMTH series. It is a N-Channel enhancement mode field-effect transistor (FET). It offers high-switching ability and low-threshold voltage operation. The DMTH8012LPSQ-13 is based on DMOS technology that offers a great deal of reliability and long-term stability. This MOSFET is great for applications in both boost and buck converters, as well as other switching applications.

Physical Characteristics

The physical characteristics of the DMTH8012LPSQ-13 are as follows:

• Package Type: D2-PAK (SOT-223)
• Number of Pins: 5
• Case Style: TO-223
• Channel Type: N-Channel
• Drain-Source Voltage (Vdss): -60V
• Drain Current (Id): -10A
• Channel Mode: Enhancement-Mode
• Temperature Range: -40C to 125C

Electrical Characteristics

The electrical characteristics of the DMTH8012LPSQ-13 are as follows:

• Threshold Voltage (Vgs(th)): -3V
• Drain-Source On-State Resistance (Rds(on)): -2.17Ohm
• Input Capacitance (Ciss): -446pF
• Output Capacitance (Coss): -734.6pF
• Rise Time (tr): -34.1ns
• Fall Time (tf): -17.3ns
• Turn-On Time (ton): -6.3ns
• Reverse Transfer Capacitance (Crss): -325.2pF

Application Field and Working Principle

The DMTH8012LPSQ-13 is primarily used in a variety of switching applications such as boost and buck converters. As a power MOSFET, it is capable of controlling a large amount of current, which makes it well suited for applications that require high current switching. The DMTH8012LPSQ-13 has a very low threshold voltage which allows it to be used in a wider range of applications.

The basic operating principle of the DMTH8012LPSQ-13 MOSFET is based on the fact that when a voltage is applied to the gate terminal, an electric field is created in the form of a depletion layer between the source and the drain. This depletion layer increases the resistance between the source and the drain, thus allowing the MOSFET to act as a switch.

Conclusion

In conclusion, the DMTH8012LPSQ-13 is a MOSFET in the DMTH series. It offers high switching abilities, low-threshold voltage operation and low on-state resistance. It can be used in a variety of applications including boost and buck converters. The basic operating principle of the device is based on the concept of a depletion layer between the source and the drain.