DMTH4007SPS-13 Allicdata Electronics

DMTH4007SPS-13 Discrete Semiconductor Products

Allicdata Part #:

DMTH4007SPS-13DITR-ND

Manufacturer Part#:

DMTH4007SPS-13

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET BVDSS: 31V 40V POWERDI506
More Detail: N-Channel 40V 15.7A (Ta), 100A (Tc) 2.8W (Ta), 136...
DataSheet: DMTH4007SPS-13 datasheetDMTH4007SPS-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.30429
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMTH4007SPS-13 is a single N-channel enhancement mode MOSFET, which has the ability to amplify electric signals and can be used to control current in various applications. This type of MOSFET is mostly used in low voltage and low-power circuit designs such as switched-mode power supplies (SMPS), audio pre-amplifier/amplifier, LED controllers, and various wireless communication systems. It is designed to manage less current than a bipolar junction transistor (BJT), and it offers faster switching speeds, simpler drive circuitry, and lower power consumption compared to BJT-based components.

The DMTH4007SPS-13 has a low on-state resistance of only 13 mOhms at VGS 4.5 V, and its VDSS rating is 60 V with current handling capacity up to 8 A, making it a great choice for almost any application that requires fast switching and SSR-controlled power switching. It also has an incredibly fast turn-on and turn-off time, with a maximum turn-on time of 2.5 ns and maximum turn-off time of 1.5 ns. These features make the DMTH4007SPS-13 ideal for applications where installation and operation times are critical.

The working principle of the DMTH4007SPS-13 is based on a G-S coupling mechanism, in which an electric signal applied to the gate electrode Helps control the conductivity of the drain-source channel. The unique characteristics of the MOSFET make it susceptible to so-called “Miller Effect”, which occurs when there is a difference between the signal applied to the gate and the actual voltage at the drain-source due to the capacitance between the two. The effect of the Miller Effect is eliminated by proper design of the gate circuitry and sufficient gate voltages.

The DMTH4007SPS-13 can be used in various applications, and it is increasingly being used in applications including switches, inverters, power supplies, and audio amplifiers. Some of the major industry applications for the DMTH4007SPS-13 include motor drives, welding power supplies, DC-DC converters, and Li-Ion battery charging systems. It is also used in high-power applications such as power MOSFET switching, current controllers, and amplification of switched-mode power supplies.

In conclusion, this type of single N-channel MOSFET offers impressive low on-state resistance, fast switching times, and simple circuitry. Its ability to control current in various applications makes it a great choice for the industry. Although the unique characteristics of the MOSFET make it susceptible to the Miller Effect, this issue can be easily addressed with proper design and gate voltages.

The specific data is subject to PDF, and the above content is for reference

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