DMTH10H030LK3-13

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package:	TO-252-4L
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1871pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	33.3nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	30 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	28A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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DMTH10H030LK3-13 is a superjunction Power MOSFET device with a rated drain current of up to 10A. It belongs to the family of Transistors - FETs, MOSFETs - Single. Manufactured by ON Semiconductor, it offers a superior combination of low on-resistance and low gate charge. The elimination of the diode from the secondary circuit makes DMTH10H030LK3-13 perfect for high-speed, high-current applications such as power supplies, motor control, DC/DC converters, amplifiers, and power converters.The DMTH10H030LK3-13 is a Field Effect Transistor (FET). It consists of a source and a drain terminal and a gate electrode. Unlike the other transistors like the bipolar junction transistors, which relies on current to control current, the FET is a voltage-controlled device meaning that the behavior of the source and drain depends upon the voltage applied to the gate. It works by creating an Electrostatic Field (E-field) across the insulating gate layer, which in turn controls the channel of the device. When a voltage is applied to the gate, current flows across the channel between the source and drain terminals and the device behaves as an amplifier.The DMTH10H030LK3-13 is a Depletion Mode Transistor. The three major types of FETs are the Enhancement Mode, Depletion Mode, and Pitch Mode. The behaviour of the DMTH10H030LK3-13 depends upon the carrier type. In the "on" state, the carrier type is electrons, and in the "off" state, the carrier type is holes. When the positive gate voltage is applied, electrons are attracted to the gate and fill the drain, preventing current from flowing through the device in the "off" state. At the same time, the gate and source are connected, allowing current to flow through the source and the drain in the "on" state.The DMTH10H030LK3-13 is capable of withstanding up to +1.35V gate voltage, and +200V drain voltage, making it suitable for High-Side and Low-Side switching applications. It has a low gate charge, high switching speed, and low output capacitance, making it an ideal solution for high-frequency, high-current applications such as switching power supplies, motor drives, and DC/DC converters. It has high avalanche immunity, making it ideal for use in high-current applications.The DMTH10H030LK3-13 is a rugged and reliable device. It is ESD-protected, and is qualified for OTP (Over Temperature Protection) up to 175°C, providing reliable operation and long operating lifetime. The device is also RoHS-compatible and AEC-Q101 qualified and is available in three different packages. It is RoHS-compatible, halogen-free, and lead-free, making it an excellent choice for high-power applications.In conclusion, the DMTH10H030LK3-13 is a versatile and reliable SuperJunction Power MOSFET device. It is an excellent choice for high-frequency, high-current applications such as power supplies, motor control, DC/DC converters, amplifiers, and power converters. Its rugged construction and advanced features such as low gate charge, high switching speed, and low output capacitance make it an ideal solution for these applications. It is RoHS-compliant, halogen-free, and lead-free, making it a safe and reliable choice for high-power applications.

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