Allicdata Part #: | DMTH4007LK3Q-13DITR-ND |
Manufacturer Part#: |
DMTH4007LK3Q-13 |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 40V 16.8A TO252 |
More Detail: | N-Channel 40V 16.8A (Ta), 70A (Tc) 2.6W (Ta) Surfa... |
DataSheet: | DMTH4007LK3Q-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.29415 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1895pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29.1nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.8A (Ta), 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMTH4007LK3Q-13 is a single N-channel, depletion mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of device is used to control and manage currents in electronic circuits. It is typical used to regulate power in direct current (DC) applications. In brief, a depletion mode MOSFET is essentially a switch which can be controlled entirely by the application of an electric current. It utilizes the principle of capacitance in order to manage current and deliver power where it is desired.
The most common application of a DMTH4007LK3Q-13 is for providing power to industrial and commercial installations such as lighting systems, HVAC systems, and commercial appliances. It is also a popular choice in automotive applications, particularly in controllers for starters and alternators. Additionally, the DMTH4007LK3Q-13 is well suited for use in many consumer applications, such as the operation of pumps, fans, and other relevant devices.
The other benefit is that a MOSFET is particularly well-suited for high-speed switching applications, such as in process control. DMTH4007LK3Q-13s are easy to integrate into existing circuits, and they can be used to control and modulate the current in either AC or DC circuits.
How DMTH4007LK3Q-13 Works
When a current is applied to its gate, the DMTH4007LK3Q-13 allows a voltage to flow from the drain-to-source terminal according to the applied gate voltage. This is done through the principle of capacitance. A MOSFET acts like one-way valves which can be opened or closed depending on the voltage of the gate. When it is turned on the channel between drain and source is opened, and current can flow freely. When it is turned off, the channel is closed off, blocking the flow of current.
A depletion mode MOSFET is what is known as an \'always on\' device. This means that when no current is applied to the gate terminal, the source-drain channel will be open and allowing current to flow. This is useful in situations where a reliable current is needed, even with no applied gate voltage. In contrast, an enhancement mode MOSFET is \'always off\' until current is applied to the gate terminal.
The DMTH4007LK3Q-13 also differs from other MOSFETs due to its specific type of design. It is designed with a low-gate threshold voltage, so it is better suited for applications which require more precise current regulation. Additionally, it is designed with a low on-state resistance which allows for more efficient current transfer and power management. This makes it an ideal choice for applications which require high levels of efficiency.
Conclusion
The DMTH4007LK3Q-13 is a single N-channel, depletion mode Metal Oxide Semiconductor Field Effect Transistor which is ideal for use in industrial and commercial applications, automotive applications, and consumer devices. It is particularly well-suited to high-speed switching applications due to its high efficiency and low on-state resistance. Its low-gate threshold voltage also makes it preferable for applications which require precise current regulation.
The specific data is subject to PDF, and the above content is for reference
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