DMTH4005SK3-13 Discrete Semiconductor Products

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DMTH4005SK3-13 is a product of ST, Inc and is named a N-Channel Enhanced mode MOSFET. It is a type of transistor with a number of special features. It is considered to be part of the Transistors - FETs, MOSFETs - Single category and is used in a variety of applications. When added to a circuit, the DMTH4005SK3-13’s unique capabilities allow it to perform a variety of functions efficiently and reliably.

DMTH4005SK3-13 reaches an on-state resistance (R DSON ) of 0.58 mΩ at a total gate charge (Q g ) of 1.00 nC at elevated temperatures. It is also highly efficient at high frequencies and has a relatively low gate resistance (R g ). These key features make the DMTH4005SK3-13 suitable for applications that require high efficiency and low heat dissipation. This includes switch-mode power supplies, power amplifiers, and high-side drivers, among others.

Additionally, the DMTH4005SK3-13 has an impressive maximum drain current (I d ) of 333A at a constant case temperature of 25°C. This helps to ensure that it’s capable of being driven with both high-voltage and high-current signals. It also has an incredibly low on-state voltage drop (R ds(on)) at 6.5V. This, too, helps support high-voltage applications.

The working principle behind the DMTH4005SK3-13 is fairly simple. When voltage is applied to the gate of the transistor, the gate current begins to flow, which creates a voltage drop across the gate-drain and gate-source junctions. This, in turn, causes the source-drain channel located between the two junctions to decrease in width. This reduces the resistance between the two junctions and increases the conduction of current from the source to the drain. This makes it possible for the DMTH4005SK3-13 to be used as a switch in a variety of applications.

To sum it up, DMTH4005SK3-13 is a N-Channel Enhanced mode MOSFET of the Transistors - FETs, MOSFETs - Single category. It is used in a variety of applications, such as switch-mode power supplies, power amplifiers, and high-side drivers. Its key features include its on-state resistance (R DSON ), high frequency efficiency, and low gate resistance (R g ). Additionally, its maximum drain current (I d ) and low on-state voltage drop (R ds(on)) make it highly suitable for applications that require high voltage. The working principle behind the transistor is that voltage is applied to the gate of the transistor, creating a voltage drop across the gate-drain and gate-source junctions, which reduces the resistance between these two junctions and increases the conduction of current from the source to the drain.

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