FCPF11N60_G

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	36W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1490pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	SuperFET™
Rds On (Max) @ Id, Vgs:	380 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The FCFP11N60_G is a logical enhancement mode Field Effect Transistor (FET) which is based on the silicon carbide semiconductor. It was created for high-current and high-voltage applications. The FET is comprised of a vertical source, drain, and gate and operates in the enhancement mode. The FET can be used as either a dual-gate, or single-gate FET depending on the application.
The main application of the FCFP11N60_G is for high-current and high-voltage control. This transistor can be used in a wide range of applications, such as industrial motor control, solar inverters, power converters, medical equipment, and power supplies. It offers low on-resistance, high-temperature operation, and fast switching speeds. The FET also utilizes a fast, zero-voltage-decoupling technique to ensure reliable operation when high-currents are present.
The working principle of the FCFP11N60_G is based on a simple process. When a voltage is applied to the gate, it creates an electric field that induces a current flow between the source and the drain. The current flow is regulated by the magnitude of the applied voltage, which can be adjusted using a controller. This ensures that the correct amount of current flows through the system, thus providing effective control.
The device utilizes a vertical structure, which makes it ideal for applications that require a high-current capacity. It also offers low drain-source on-resistance, allowing for improved efficiency and faster switching speeds. Additionally, it uses a zero-voltage-decoupling technique to ensure reliable control of high-currents, making it perfect for high-voltage and high-current applications.
The FET is reliable, cost-effective and provides excellent performance in a wide range of applications. This makes it an ideal choice for those seeking high-current and high-voltage control. The FCFP11N60_G has low switching losses, high surge currents, and fast switching speeds. It is also compatible with almost all logic-level controllers, making it suitable for a variety of applications.

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