Allicdata Part #: | FCPF400N80ZL1-ND |
Manufacturer Part#: |
FCPF400N80ZL1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 11A TO220 |
More Detail: | N-Channel 800V 11A (Tc) 35.7W (Tc) Through Hole TO... |
DataSheet: | FCPF400N80ZL1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2350pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FCPF400N80ZL1 Application Field and Working Principle
The FCPF400N80ZL1 is a high performance enhancement mode, N-channel MOSFET designed for high current, high voltage, and high speed switching applications. In simple terms, FCPF400N80ZL1 is generally known as a power MOSFET, which consists of a substrate (also known as a channel) between two source and drain terminals. The FCPF400N80ZL1 is mainly used in power converters, power supplies, high power switching applications, and other high voltage switching applications.
The construction of the FCPF400N80ZL1 is based on a vertical double-diffused insulated gate transistor structure. This allows it to offer one of the highest power densities available in the industry, with typical gate-drain breakdown voltages of 800 volts and low gate charge, allowing for high increase in efficiency in power and speed. Additionally, this power MOSFET offers a high current path from the gate to the drain, making it ideal for applications that require high current drive capabilities, such as automotive and industrial applications.
The operation of the FCPF400N80ZL1 can be best understood by looking at its internal structure and operation. The FCPF400N80ZL1 consists of a vertical double-diffused insulated gate transistor structure, with an N-type semiconductor substrate between the source and drain. The presence of the N-type substrate between the source and drain is the main feature that makes it an enhancement mode device. The gate terminal is an insulated gate that sits on top of the substrate and applies an electric field when a voltage is applied. This electric field induces a current flow if the voltage applied is above the threshold of the device. This current then flows through the source and drain, allowing it to turn the device on.
The FCPF400N80ZL1 is capable of operating at very high frequency and can provide high current drive capability. It can be used in a wide range of applications from high efficiency computing, high speed switching, and high voltage switching applications. Additionally, it can be used in automotive applications, such as automotive lighting as well as in high frequency power converter applications.
In conclusion, the FCPF400N80ZL1 is a high performance enhancement-mode N-channel MOSFET designed for high current, high voltage, and high speed switching applications. It is capable of operating at very high frequencies and provides high current drive. Additionally, it can be used in a variety of applications, such as automotive lighting and high frequency power converter applications. This makes it an ideal device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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