FCPF1300N80ZYD Allicdata Electronics
Allicdata Part #:

FCPF1300N80ZYD-ND

Manufacturer Part#:

FCPF1300N80ZYD

Price: $ 1.74
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 4A TO220F
More Detail: N-Channel 800V 4A (Tc) 24W (Tc) Through Hole TO-22...
DataSheet: FCPF1300N80ZYD datasheetFCPF1300N80ZYD Datasheet/PDF
Quantity: 800
1 +: $ 1.57500
10 +: $ 1.42002
100 +: $ 1.14112
800 +: $ 0.80130
1600 +: $ 0.73537
Stock 800Can Ship Immediately
$ 1.74
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Package / Case: TO-220-3 Full Pack, Formed Leads
Supplier Device Package: TO-220F-3 (Y-Forming)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 24W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCFP1300N80ZYD is a popular MOSFET component used in modern electronic devices. It is a power FET (field effect transistor) and belongs to the family of n-channel enhancement mode mosfets. This component is designed to provide excellent stability, high power efficiency and reliability in demanding applications.

Application fields for the FCFP1300N80ZYD are varied, but most notably it can be used as a switching element in digital logic gates and as an amplifier in radio and audio applications. Additionally, it can be used to provide power control and boost voltage in power distribution circuits, as well as driving motor circuits, such as those found in industrial robotics and life-support systems.

The FCFP1300N80ZYD works in a unique way by allowing the voltage across its gate-source to be regulated to control the current flowing through its drain-source. It is a voltage-controlled device, so it needs a low gate-source voltage (Vgs) to function. The gate-source voltage is a control signal that is applied to the gate terminal of the FET and its drain-source current is modulated by the magnitude of this control signal.

The FCFP1300N80ZYD is an enhancement-mode mosfet, which means that its gate-source voltage must be increased to turn it on. This type of device is capable of very high blocking voltages and its on-resistance is very low. It is designed to have a very low thermal resistance, which makes it ideal for high power application and also helps to ensure high reliability with long rated lifetimes.

At its core, the FCFP1300N80ZYD is a three-terminal device composed of a source, drain and gate. The source, drain, and gate are all connected to each other through a single semiconductor layer and a gate oxide layer. This structure forms a ‘channel’ through which electrons can flow between the source and the drain, when an appropriate gate-source voltage is applied. The current flow through this channel is proportional to the applied gate-source voltage and is mainly limited by the device’s on-resistance.

The FCFP1300N80ZYD is a unique MOSFET component with many useful applications and is well-suited for high power and voltage applications. Its ability to handle high voltages, its durability and its thermally efficient design make it an ideal choice for many modern electronic applications.

The specific data is subject to PDF, and the above content is for reference

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