FCPF4300N80Z Allicdata Electronics
Allicdata Part #:

FCPF4300N80Z-ND

Manufacturer Part#:

FCPF4300N80Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 1.6A TO220-3
More Detail: N-Channel 800V 1.6A (Tc) 19.2W (Tc) Through Hole T...
DataSheet: FCPF4300N80Z datasheetFCPF4300N80Z Datasheet/PDF
Quantity: 931
Stock 931Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 800mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FET, or field effect transistors are widely used in modern electronics. They are known to require less input current to drive a large output, and are very reliable in terms of reliability and speed. The FCFP4300N80Z is a MOSFET that can be used in a variety of applications. This article will discuss the application field and working principle of the FCFP4300N80Z.

Application Field of FCFP4300N80Z

The FCFP4300N80Z is a power MOSFET that is ideal for a wide range of applications. It has an RDS(ON) of 6 to 8nV, which makes it an effective power switch for high power applications. It is used in many applications in industries such as robotics, car audio and communication, and can be used in many different projects. It is also great for high-efficiency motor control and DC/DC converters. It is capable of withstanding high temperatures of up to 175°C.

Working Principle of FCFP4300N80Z

The working principle of the FCFP4300N80Z is similar to other FETs and MOSFETs. It has three terminals which are the source, gate, and drain. The source and drain terminals are connected to the power supply, and the gate is connected to the controlling voltage. By artificially creating an electric field, electrons can be moved from the source to the drain, resulting in current flow. The MOSFET can be turned on or off by changing the voltage on the gate.

The FCFP4300N80Z also comes with various features that makes it more reliable and efficient. It has an extended drain-source breakdown voltage, a high temperature rating, and a lower gate threshold voltage. Additionally, its extremely low risetime and falltime makes it suitable for high speed applications. All these features make the FCFP4300N80Z an excellent choice for many applications.

Conclusion

In conclusion, the FCFP4300N80Z is a power MOSFET that is suitable for a wide range of applications. It has an RDS(ON) of 6 to 8nV and is capable of withstanding temperatures of up to 175°C. Additionally, its features such as its low risetime and falltime, and its extended drain-source breakdown voltage makes it ideal for high power and speed applications. Overall, the FCFP4300N80Z is a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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