
Allicdata Part #: | FCPF20N60T-ND |
Manufacturer Part#: |
FCPF20N60T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 20A TO-220F |
More Detail: | N-Channel 600V 20A (Tc) 39W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3080pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Series: | SuperFET™ |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FCFP20N60T is a high voltage field-effect transistor (FET) manufactured by Vishay Semiconductors with an ultrathin package. The FET has a drain source voltage rating of 20V with a drain current of approximately 6A when operated in a variety of applications. The FET also has a maximum drain source on-resistance of 0.5Ω.
FCFP20N60T is a highly versatile field-effect transistor with a wide range of applications. It is ideal for use in power converters, power supplies, and motor controls, acting as a bridge between a high-voltage power source and a load. It can be used in switching circuits such as DC-DC converters, relay drivers, and pulse-width modulator (PWM) circuits. It is also often used in signal switching applications and low-side switching circuits for load switching.
Understanding the working principle of the FCFP20N60T is important before using it in any application. It is a type of junction field effect transistor (JFET) which has two terminals, the gate and the drain, while the source is separated from the gate and the drain by an insulating layer. When a positive voltage is applied to the gate, the electric field induced by the positive voltage gap electrons in the drain, effectively decreasing the resistance of the circuit. The FCFP20N60T is reverse-conductive, meaning that when the voltage is reversed the resistance of the drain increases significantly.
To keep the gate voltage at zero and enhance the switching performance, the FET is often used in an arrangement with an anti-parallel diode. This diode will conduct the established current once the FET is reactivated again. This arrangement allows for easy switching on/off and fast operation of the FET; additionally, the diode helps to prevent the FET from being damaged by the large current surges caused by inductive loads.
To improve the performance of the FET, it is recommended to use a small value heat sink on the drain. This will help dissipate the generated heat quickly and prevent the FET from overheating and damaging. While using the FET, it is important to understand its limitations and to respect the maximum rated voltage as exceeding that voltage could result in permanent damage of the FET.
With its high voltage rating, low on-resistance, and low thermal resistance, the FCFP20N60T offers excellent performance and is ideal for a variety of applications. It is commonly used in a wide range of motor and power supply applications, and its reverse-conductive gate makes it perfect for signal switching operations and low-side switching circuits.
The specific data is subject to PDF, and the above content is for reference
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