Allicdata Part #: | FCPF7N60T-ND |
Manufacturer Part#: |
FCPF7N60T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 7A TO-220F |
More Detail: | N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-22... |
DataSheet: | FCPF7N60T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | SuperFET™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FCPF7N60T is a type of field-effect transistor (FET) that belongs to a class of transistors and is sometimes referred to as a metal-oxide-semiconductor FET (MOSFET). In simple terms, FETs like the FCPF7N60T are electrically controllable switches designed to rapidly and accurately switch a signal in response to a small voltage or current on the gate. The FCPF7N60T is a subclass of FETs known as a single enhancement-mode MOSFET, which is controlled using a single gate.
Application Field
The FCPF7N60T has a range of potential applications thanks to its low on-state resistance, high speed response, wide input voltage range, and low capacitance. The FCPF7N60T is suitable for use in a number of high-frequency applications, such as voltage-controlled oscillators, switching power supplies, and motor drives. It is also suitable for use in digital circuits, including ripple counters, delay lines, and pulse generators. Additionally, due to its relatively small size, the FCPF7N60T can be used in a range of battery-powered electronic devices, such as portable computers and mobile phones.
Working Principle
The FCPF7N60T, like all FETs, works by providing an electrical path between its source and drain electrodes, which are created by the presence of an electric field generated by voltages applied to the FET’s gate. When the gate voltage is below a certain threshold, the FET acts as an insulated electrical open switch and no current flows through the source-drain circuit. When, however, the voltage applied to the gate exceeds this threshold, the FET behaves like an electrical closed switch, transferring a current, or signal, from the source to the drain.
The gate voltage threshold of the FCPF7N60T is low, which means that it only requires a low voltage signal to switch the FET on. This makes it well-suited to certain applications that require low-power switching. The FCPF7N60T can also switch a signal at an incredibly fast rate, which makes it useful for signal processing purposes.
The FCPF7N60T is a versatile type of FET that can be used in a wide range of applications. It is a single enhancement-mode MOSFET, which means that it can be easily controlled with a single gate. The FCPF7N60T also has a low on-state resistance and fast response time, making it well-suited to applications that require fast switching of small signals. Finally, the FCPF7N60T is small in size, which makes it suitable for use in battery-powered devices.
The specific data is subject to PDF, and the above content is for reference
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