FCPF2250N80Z

Vgs(th) (Max) @ Id:	4.5V @ 260µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	21.9W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	585pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	SuperFET® II
Rds On (Max) @ Id, Vgs:	2.25 Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The FCPF2250N80Z is a member of the family of discrete FCPF2250N80Z MOSFETs (metal-oxide-semiconductor field-effect transistors). It’s a by-pass FET, which is an important part in a wide range of electronic applications such as switch power systems. This MOSFET operates from a drain-source voltage of 650 V to 1000V, and can provide a relatively high amount of power with minimal distortion and power dissipation.

Applications

An FCPF2250N80Z restricts current flow through it by blocking the voltage from turning on an electronic component until the digital signal applied to the gate exceeds the threshold voltage. The FCPF2250N80Z is typically employed in commonly used digital circuits including core logic to reduce noise; amplifiers, logic drivers and DC-DC converters to reduce power losses; and switch-mode power supplies to improve efficiency and reduce distortion.In addition to the explained digital applications, the FCPF2250N80Z is also suitable for low-distortion analog applications. Oscillator, amplifier, multiplexer, scaler and modulator circuits use the FCPF2250N80Z to moderate the signal throughout the circuitry. This ensures minimal distortion and noise.

Working Principle

The FCPF2250N80Z MOSFET provides protection from high voltage by blocking current flow unless a gate signal reaches the gate threshold voltage. The MOSFET has three pins: gate, drain and source. When a logic signal is sent to the gate, the threshold voltage is reached, the MOSFET switches on and the current flows across the drain and source.The structure of the FCPF2250N80Z consists of a single P-type substrate, which is connected to the drain, and an N-type layer, which acts as the gate. When a gate voltage below the threshold voltage is applied, the MOSFET is in the off state and no current is permitted to flow. When this threshold is exceeded, the MOSFET changes over to an on state, allowing an electric current to pass.

Benefits of FCPF2250N80Z

The FCPF2250N80Z has several advantages over traditional transistors. These include greater power handling capability due to the higher voltage rating, lower on-state resistance and faster switching speed.The FCPF2250N80Z provides significant power savings and a larger mean-time-to-failure (MTTF) rating for lower component cost when compared to traditional transistors. This is because it supports higher operating temperature without a decrease in component lifetime.Finally, the FCPF2250N80Z helps reduce EMI (electromagnetic interference) issues that are often seen in circuits with digital components. This is achieved by reducing the switching speed of the transistor, resulting in minimal production of EMI.

Conclusion

The FCPF2250N80Z is a by-pass FET suitable for a wide range of digital and analog applications. From high voltage application to low distortion noise control, the FCPF2250N80Z allows better power handling, higher MTTF and reduced EMI, making it an excellent choice.

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