
Allicdata Part #: | FDMC7200TR-ND |
Manufacturer Part#: |
FDMC7200 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 6A/8A POWER33 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6A, 8A 700mW, ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.22000 |
10 +: | $ 0.21340 |
100 +: | $ 0.20900 |
1000 +: | $ 0.20460 |
10000 +: | $ 0.19800 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6A, 8A |
Rds On (Max) @ Id, Vgs: | 23.5 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 15V |
Power - Max: | 700mW, 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-Power33 (3x3) |
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The FDMC7200 is a field effect transistor (FET) array IC with a variety of practical application fields. Different from traditional transistors and field effect transistors, the FDMC7200 is an integrated solution for the semiconductor device industry. It increases the number of transistors in the package by coupling the devices via metal oxide semiconductor (MOS) gates. This enables the same FET to control multiple transistors, thus reducing the complexity and cost of the circuit.
Some of the general applications fields of the FDMC7200 include computers, display controllers, and analog-to-digital (A/D) converters. It can also be applied in power amplifiers, ground ballast resistor (GFR) circuits, clipper circuits, and current limiters. The FDMC7200 is especially suitable for power amplifiers and audio applications since it has the ability to reduce the size of an audio system flexibly.
Due to its unique combination of cascode FETs and poly-phase MOSFETs, the FDMC7200 offers a balanced, high-power, and low noise level transistor array. The MOSFET capability of the FDMC7200 substantially reduces the devices operating voltage, increases power efficiency, and reduces power dissipation.
The FDMC7200 features high withstand voltage ratings, low on-resistance, high reliability and improved power dissipation capability due to its low resistance body, oxide insulating layers and novel surface passivation structure. It also delivers superior video, audio, and analog performance due to its high voltage ratings and low junction capacitance. With its flexible pin-out arrangement, the FDMC7200 is also applicable to a wide range of applications.
The FDMC7200 works on the principle of voltage control. It employs the MOS technology to form a voltage scaling device. The voltage scaling device contains several circuits, each acting as a “gate” that controls the state of one or more transistors to determine the behavior of the overall device. In the FETs formed, when a voltage is applied at the gate, it alters the electron and hole flow in the channel, thereby changing the transistor\'s resistance.
The FDMC7200 also rocks an on-board charge pump for gate drives. The charge pump is used to provide the necessary gate drive voltage for FET operations. It requires an input gate voltage of 1.5V or lower, allowing for a reduced supply voltage. The charge pump is also capable of handling high voltages, up to 20V.
In conclusion, the FDMC7200 is an excellent choice for many applications due to its high power, low noise level, and superior video, audio, and analog performances. With its wide array of application fields, it is one of the most versatile and cost effective FETs array ICs available on the market. It is estimated that the FDMC7200 will continue to be an industry favorite, as it provides excellent value in terms of both cost and performance.
The specific data is subject to PDF, and the above content is for reference
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