| Allicdata Part #: | FDMC86340ET80TR-ND |
| Manufacturer Part#: |
FDMC86340ET80 |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 80V 48A POWER33 |
| More Detail: | N-Channel 80V 14A (Ta), 68A (Tc) 2.8W (Ta), 65W (T... |
| DataSheet: | FDMC86340ET80 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.62400 |
| 10 +: | $ 0.60528 |
| 100 +: | $ 0.59280 |
| 1000 +: | $ 0.58032 |
| 10000 +: | $ 0.56160 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | Power33 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 65W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2775pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 68A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMC86340ET80 is a type of Field Effect Transistor (FET) and has great performance, making it suitable for a wide range of applications. This FET operates using the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology, which is an advanced semiconductor technology that makes it possible to control the current without using any bulky and bulky hardware. This FET is also known as an enhancement-mode MOSFET, which means that the FET operates in an “on” state when the gate voltage is positive.
The FDMC86340ET80 is a single-gate FET, which means that it uses a single transverse gate to control the current flow. This FET is used primarily as a switch or amplifier and is compatible with a wide range of voltage and current levels. Since the FET is composed of a small number of metal-oxide films, it is highly reliable and can be used in high-precision and high-speed circuit designs. Furthermore, this FET features a very low ON-Resistance (RDS ON ), which makes it suitable for low-power applications.
The working principle of an FDMC86340ET80 is quite simple. When a positive voltage is applied between the source and the gate of the FET, a channel of carriers is created through the metal-oxide films, allowing current to flow from the source to the drain. Since the FET is enhancement-mode, the current flow is only triggered when the gate voltage is positive. When the voltage applied between the gate and the source becomes less than the threshold voltage, the current stops flowing and the FET turns off.
The FDMC86340ET80 is an ideal solution for many applications due to its remarkable performance. This FET can be used in many types of electronics devices, including power supplies and motor control equipment. Furthermore, due to its low ON-resistance and fast switching time, this FET is suitable for high-performance digital logic circuit designs as well. For example, it can be used as a driver transistor for high-speed digital logic circuits.
In conclusion, the FDMC86340ET80 FET is a very versatile and reliable FET that is suitable for many applications. This FET can be used in a wide variety of low-power and high-performance circuit designs and is capable of handling a wide range of voltage and current levels. It is one of the most popular FETs in the market today, due to its reliable performance, its low ON-resistance, and fast switching time.
The specific data is subject to PDF, and the above content is for reference
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FDMC86340ET80 Datasheet/PDF