FDMC8097AC Allicdata Electronics
Allicdata Part #:

FDMC8097ACTR-ND

Manufacturer Part#:

FDMC8097AC

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 150VMosfet Array N and P-Channel 150...
More Detail: N/A
DataSheet: FDMC8097AC datasheetFDMC8097AC Datasheet/PDF
Quantity: 933
1 +: $ 0.50400
10 +: $ 0.48888
100 +: $ 0.47880
1000 +: $ 0.46872
10000 +: $ 0.45360
Stock 933Can Ship Immediately
$ 0.5
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)
Base Part Number: --
Description

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The FDMC8097AC is a dual-gate MOSFET array manufactured by ON Semiconductor. It is a dual, complementary metal-oxide-semiconductor (CMOS) array composed of ten N-channel MOSFETs and four P-channel MOSFETs. It is available in a 14-pin dual in-line package (DIP) with both gates of the transistors connected to each other and to their corresponding sources.

The FDMC8097AC is a versatile MOSFET array that can be used in a variety of applications. Its combination of low on-state resistance and high input impedance makes it ideal for use in motor control, speech processing, pulse generators and switching circuits. The device is also well-suited for use in digital signalling, power management and communications applications.

The FDMC8097AC exhibits excellent switching performance and is suitable for use in high-speed switching and logic circuits. In addition, the device can be used in high-voltage environments and is robust enough to handle up to 20 V between its gates and drain. The device also exhibits excellent switching speed, with switching times of up to 75 ns.

As with all MOSFETs, the FDMC8097AC operates using the gate oxide as an insulator between the gate and the channel. When a positive gate voltage is applied, it induces a positive change in the gate oxide, which increases the electrical field in the channel, allowing electrons to flow between the source and the drain. This process is referred to as the "inversion layer". When the gate voltage is removed, the inversion layer is no longer present, and the device is "OFF", effectively blocking current flow between the source and drain.

The FDMC8097AC is an excellent choice for a wide range of applications, due to its versatile nature, high-speed switching, robustness and low power consumption. Its ability to handle a wide range of voltage and current levels makes it a reliable and cost-effective solution for a variety of applications. Its combination of features makes it an ideal choice for motor control, digital switching, pulse generation, and communications applications.

The specific data is subject to PDF, and the above content is for reference

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