Allicdata Part #: | FDMS003N08C-ND |
Manufacturer Part#: |
FDMS003N08C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | FET ENGR DEV-NOT REL |
More Detail: | N-Channel 80V 22A (Ta), 147A (Tc) 2.7W (Ta), 125W ... |
DataSheet: | FDMS003N08C Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 73nC @ 10V |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Power56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5350pF @ 40V |
Vgs (Max): | ±20V |
Series: | PowerTrench® |
Vgs(th) (Max) @ Id: | 4V @ 310µA |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 56A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 147A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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FDMS003N08C is a part of the MOSFET family and belongs to the Single FETs group. This type of transistor is important for many applications and with its features it can be a great choice for many projects. This article will discuss the application fields and working principle of the FDMS003N08C.
Applications
The FDMS003N08C is a high power Mosfet which is suitable for a variety of industrial and consumer electronics. It has a very low resistance and an exceptionally low on-resistance which makes it ideal for switching applications. Additionally, the FDMS003N08C is available in many different packages which makes it a great choice for use in devices that require tight packaging. Furthermore, this transistor is perfect for use in hot-swap, power conversion, and current controlling systems. For instance, it is often used in power switching, drive controllers, solar and energy harvesting systems, and for AC/DC applications.
Working Principle
The FDMS003N08C is a field-effect transistor (FET) which has two terminals, the source and the drain. This type of transistor is similar to a regular amplifier but with different characteristics. The FDMS003N08C is a voltage-controlled device which means that the current that flows through it is proportional to the voltage applied to the gate. When a positive or negative voltage is applied to the gate, the current flow between the source and the drain increases or decreases proportionally.
The FDMS003N08C also has two additional gates, the bulk and body gates, which are used to control the transistor’s threshold voltage. By adjusting the voltage at the bulk and body gates, the transistor can be used in applications requiring higher currents or lower voltages. Additionally, the FDMS003N08C has very low noise levels which makes it suitable for use in audio applications.
The FDMS003N08C has many advantages including low power consumption, high performance, low on-resistance, and accurate current handling. Additionally, because of its size and shape, this transistor can be used in a variety of places, such as air-born or high-density packaging.
Conclusion
The FDMS003N08C is a high power MOSFET which is suitable for a variety of applications. It has a very low resistance and an exceptionally low on-resistance which makes it ideal for switching applications. Furthermore, it has two additional gates, the bulk and body gates, which are used to control the transistor’s threshold voltage. Additionally, because of its size and shape, this transistor can be used in a variety of places, such as air-born or high-density packaging. All in all, the FDMS003N08C is an excellent choice for many industrial and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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