
Allicdata Part #: | FDMS0300STR-ND |
Manufacturer Part#: |
FDMS0300S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 31A |
More Detail: | N-Channel 30V 31A (Ta), 49A (Tc) 2.5W (Ta), 96W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8705pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 133nC @ 10V |
Series: | PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 49A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDMS0300S is a single N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device manufactured by Infineon Technologies. It is a vertical 4 pin device with a maximum drain current ranging from 30 to 75 A and can be operated at a maximum Drain-Source voltage VDS of 30 V. It also has a Drain-Source on-resistance RDS(ON) of 0.0032Ω.
The FDMS0300S can be used in a wide range of applications including high current switching, high speed power switching, motor control, audio, switching power supply, lighting control and intelligent power module (IPM) etc.
Working Principle
The FDMS0300S MOSFET works on the principle of ‘Gate Control’. It consists of four pins, namely Source, Drain, Gate and Body. When a positive voltage is applied to the Gate, it creates an electric field resulting in a conducting channel between Source and Drain. This is what is known as the On-state, where the current passes through the device. When the Gate voltage is reversed, the electric field collapses and the conducting channel is cut off. This is known as the Off-state, where the current does not pass through the device.
The FDMS0300S has two modes of operation. First, it can be used in its standard mode, where it provides a low resistance path between its Source and Drain pins when the Gate voltage is applied. Second, it can be used in its linear mode, where the Source-Drain current is proportional to the applied Gate voltage. This mode is mostly used in audio applications and motor control as it provides a variable voltage output.
In order to reduce the leakage current, the device is designed with a Body pin. The body pin is connected to the Source pin and is designed to hold a voltage potential. When the voltage potential is greater than the threshold voltage of the device, the leakage current is reduced. This helps to reduce the power consumption of the device in both standby and on-state.
The FDMS0300S can also be used in high temperature applications with its higher surge capability and improved heat dissipation. It has an Avalanche energy rating of 30A (HBM) and can withstand temperatures up to 175°C. The device has a low parasitic inductance and capacitance which results in a fast switching speed and low power consumption.
In conclusion, the FDMS0300S is a versatile MOSFET device with a wide range of application. It can be used for high current switching and power switching, motor control, audio, switching power supply, lighting control and intelligent power modules etc. It can also be used in high temperature applications with its improved heat dissipation and high surge capability. The device has a low on-resistance RDS(ON), low parasitic inductance and capacitance, fast switching speed and low power consumption, which makes it an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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