| Allicdata Part #: | FDMS0308ASTR-ND |
| Manufacturer Part#: |
FDMS0308AS |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 24A PT8 |
| More Detail: | N-Channel 30V 24A (Ta), 49A (Tc) 2.5W (Ta), 50W (T... |
| DataSheet: | FDMS0308AS Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.17600 |
| 10 +: | $ 0.17072 |
| 100 +: | $ 0.16720 |
| 1000 +: | $ 0.16368 |
| 10000 +: | $ 0.15840 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
| Series: | PowerTrench®, SyncFET™ |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 24A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 49A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMS0308AS is a field-effect transistor (FET). It is a single gate, or single FET, meaning it has a single gate electrode, which is connected to the electrical current source. In terms of structure, it is a majority carrier, or MOSFET, which is a type of FET that has an insulated gate electrode.
The FDMS0308AS is an ideal choice for a variety of applications, from motor control to power conversion, and from audio switching to high-speed switching. It is designed for use in both low-voltage and high-voltage circuits, and can be used for switching and/or amplification, making it a versatile and reliable FET.
The FDMS0308AS has a number of operating principles which make it suitable for a variety of applications. First, the insulated gate electrode allows the FDMS0308AS to operate in both static and dynamic modes, meaning that the transistor can be used in either a static or dynamic environment. Second, by applying a positive supply voltage to the gate, the channel between the source and the drain is opened and the current flow controlled.
Third, the FDMS0308AS can operate in both enhancement and depletion modes, allowing the user to select the appropriate mode for the application. In enhancement mode, a small voltage on the gate electrode causes a high current to flow between the source and the drain, and in depletion mode a small voltage on the gate electrode causes a low current to flow between the source and the drain. This allows the user to adjust the gain or the current output of the FET.
Finally, the FDMS0308AS can operate at temperatures up to 125°C, making it suitable for use in power supplies, motor control applications, and other areas where a high temperature is likely to be encountered. Additionally, it is also available in different package sizes and logic levels, which allows the user to customize the transistor to the desired application.
The FDMS0308AS is therefore a versatile and reliable FET, suitable for a wide range of applications. With its single gate, insulated gate electrode, and ability to operate in both static and dynamic modes, it is an ideal choice for a variety of purposes, such as motor control and power conversion.
The specific data is subject to PDF, and the above content is for reference
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FDMS0308AS Datasheet/PDF