| Allicdata Part #: | FDMS037N08BTR-ND |
| Manufacturer Part#: |
FDMS037N08B |
| Price: | $ 0.65 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 75V 100A 8QFN |
| More Detail: | N-Channel 75V 100A (Tc) 830mW (Ta), 104.2W (Tc) Su... |
| DataSheet: | FDMS037N08B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.64800 |
| 10 +: | $ 0.62856 |
| 100 +: | $ 0.61560 |
| 1000 +: | $ 0.60264 |
| 10000 +: | $ 0.58320 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 830mW (Ta), 104.2W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5915pF @ 37.5V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMS037N08B Field Effect Transistor (FET) is a high power silicon MOSFET designed for fast switching applications. It is manufactured using advanced Field Emission Technology, which allows high performance switching with low losses and fast switching speeds at high temperatures. The device is also able to deliver high-current density in low-voltage applications. This makes it ideal for use in motor control applications, DC/DC converters, motor drives, and switching power supplies.
The FDMS037N08B is a depletion-mode type transistor, meaning that it is normally ON and only switches OFF when it receives a negative gate voltage. It is constructed using a single-channel enhancement-type of silicon gate technology, with a drain-source breakdown voltage of 800V and a maximum drain current of 27A. It also has a maximum drain-source on-state resistance of 0.070 Ohm and a maximum junction temperature rating of 175°C. It is capable of switching frequencies up to 2 MHz for fast switching operations.
The FDMS037N08B’s working principle involves the application of an appropriate gate voltage. When the gate is positively charged, the transistor is in the forward conduction state and current flows from the source to the drain. Conversely, when the gate voltage is set to 0V or a negative voltage, the device is in the reverse-blocking state and no current flows through. The gate voltage can be varied to control the gate-source voltage, which determines the drain current, and consequently the power output of the device.
The FDMS037N08B can be used in a wide range of applications, including consumer and industrial power management, motor controls, DC/DC converters, lighting, and portable applications. It can also be used in communications and networking designs, high-power drive circuits, and server and storage systems.
Due to its impressive ratings, high efficiency, and fast switching speeds, the FDMS037N08B is an ideal device for many high-power or high-current applications. Its low drain-source on-state resistance and low thermal resistance further enhances its power output and makes it an efficient and reliable device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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FDMS037N08B Datasheet/PDF