FDMS2D5N08C

Gate Charge (Qg) (Max) @ Vgs:	84nC @ 10V
Package / Case:	8-PowerTDFN
Supplier Device Package:	Power56
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	138W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6240pF @ 40V
Vgs (Max):	±20V
Series:	PowerTrench®
Vgs(th) (Max) @ Id:	4V @ 380µA
Rds On (Max) @ Id, Vgs:	2.7 mOhm @ 68A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	166A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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FDMS2D5N08C Application Field and Working Principle

FDMS2D5N08C is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor. It has an absolute maximum rating of 60V, 8A and Rds (on) of 0.02W. This MOSFET features ultra-low on-resistance and is available in a small SO-PowerPAK® footprint. As such, FDMS2D5N08C is suitable for use in a wide variety of applications such as audio power amplifiers, lighting, and efficiency power converters/inverters.MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are one of the most popular components in power electronics since they are the most efficient switches. MOSFETs are three-terminal devices, consisting of a Source (S), a Drain (D) and a Gate (G). By biasing the gate to the appropriate voltage, a small current can be used to control a much larger electrical current. This is known as field effect quantum tunneling, as the source current is allowed to travel through a quantum tunnel, which is created by the electric field from the gate. FDMS2D5N08C is a PowerTrench® MOSFET, designed by Fairchild Semiconductor. It has a good current carrying capacity and features ultra-low Rds(on) resulting in low power losses and better efficiency. In addition, the device has a small gate charge and an Accu-PunchTM (PN) punch-through structure that is designed to minimize on-state resistance, resulting in higher efficiency and reliable operation.The basic principles of operation of a PowerTrench® MOSFET are as follows: A gate terminal is used to control the operation of the MOSFET. The gate voltage is either positive or negative and is referred to as Vg. When the gate voltage is positive, it turns the MOSFET “on”, at which point there is current flowing from source to drain. When the voltage is negative, it turns the MOSFET “off”, at which point there is no current flowing from source to drain.The applications of FDMS2D5N08C are as numerous as the applications of MOSFETs in general. It is used for a variety of power management applications such as audio power amplifiers and noise cancellation, switching power supplies, automotive, lighting, DC/DC converters and power inverters, etc.The main benefits of using FDMS2D5N08C are its ultra-low Rds(on), which minimizes power losses, and the small footprint which allows it to fit into smaller systems. Furthermore, due to its low gate charge, it requires less energy to turn it on or off, with less ringing and faster response time.In conclusion, FDMS2D5N08C is a reliable, cost-effective and versatile component that is ideal for applications requiring high performance, low power losses and low footprint such as audio power amplifiers, lighting, and efficiency power converters/inverters. Its ultra-low Rds(on) and small physical size makes it a valuable asset to designers aiming to create efficient, cost-effective and reliable products.

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