Allicdata Part #: | FDMS3016DCTR-ND |
Manufacturer Part#: |
FDMS3016DC |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 18A 8-PQFN |
More Detail: | N-Channel 30V 18A (Ta), 49A (Tc) 3.3W (Ta), 60W (T... |
DataSheet: | FDMS3016DC Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.68465 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Dual Cool™56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1385pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | Dual Cool™, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 49A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDMS3016DC application field and working principle
The FDMS3016DC are single N-channel power field effect transistors (FETs) from Fairchild, offering low gate-source threshold, low RDS (ON) and low gate charge ideal for load switching, motor control, DC-DC and AC-DC regulator designs. Offered in the WDFN3X3-16L and DFN3X3-16L packages, the FDMS3016DC provide customers with an additional package and channel configuration solution with the same features and benefits as the FDS6679 in a more economical and space-saving packages.
Features
- N-channel
- Integrated slewing rate control for speeds
- Low gate charge
- Low gate-source threshold
- Low RDS (ON)
- Source-drain diode
- Integrated ESD protection
- WDFN3X3-16L and DFN3X3-16L packages
Applications
- DC-DC VRM regulator
- Servo Motor Control
- Power supply loads switching
- AC-DC regulators
Working Principle
The FDMS3016DC is an N-Channel power MOSFET that works on the principles of electrostatic control of the current between the drain and the source. An electric field is created by the voltage applied to the gate terminal. The field lowers the contact resistance between the drain and source. This allows the current to flow from the drain to the source and the MOSFET is said to be in the "ON" state.
When the voltage on the gate terminal is decreased to zero or is less than the threshod voltage VGS(th) the electric field is zero and the contact resistance is increased to very high value and current does not flow from the drain to source connection. The MOSFET is said to be in the "OFF" state.
The FDMS3016DC can be switched from the "OFF" state to the "ON" state by increasing the voltage on the gate terminal above the theshold voltage VGS (th) and vice versa. This allows the circuit to be switched on and off using very low gate drive voltage.
The FDMS3016DC has an internal body diode between the source and drain terminals. This diode is used for prevention of overvoltage between the source and drain and is used for circuit protection when the drain voltage is greater than the source voltage.
The specific data is subject to PDF, and the above content is for reference
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