FDMS7558S Allicdata Electronics
Allicdata Part #:

FDMS7558STR-ND

Manufacturer Part#:

FDMS7558S

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 32A POWER56
More Detail: N-Channel 25V 32A (Ta), 49A (Tc) 2.5W (Ta), 89W (T...
DataSheet: FDMS7558S datasheetFDMS7558S Datasheet/PDF
Quantity: 3000
1 +: $ 0.43200
10 +: $ 0.41904
100 +: $ 0.41040
1000 +: $ 0.40176
10000 +: $ 0.38880
Stock 3000Can Ship Immediately
$ 0.43
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 13V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 49A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDMS7558S is a robust and powerful single field effect transistor (FET) that is widely used in a range of applications. It has become a preferred choice by industry professionals due to its excellent performance characteristics, reliability and cost effectiveness. It is a popular choice of engineers working with high frequency and demanding applications because it can be easily integrated into other components and designs. FDMS7558S is a versatile FET that can be used in a number of circuit designs, such as power amplifiers, mixers, switches and more.

The FDMS7558S is a single FET that features a SiGe heterojunction bipolar FET (HBT) structure, which helps to provide superior performance, including high impedance and transconductance. The FET is designed with a compact body size, making it suitable for applications in extremely confined spaces. It also features a low noise figure and low convection coefficient. The FET’s drain-source resistance (RDS) is just 2.2 mOhms, which provides a low Leakage current and ensures better efficiency. It can handle up to 8A drain-source current, making it suitable for higher power applications.

When it comes to its working principle, the FDMS7558S is a N-Channel Enhancement Mode FET. It works on the principle of varying the drain-source voltage to regulate the flow of current passing through the device. When the gate is connected with a positive voltage, electrons are attracted to the gate from the drain to the source. This in turn causes the current flow between the drain and the source. By varying the voltage between the gate and the source, the current can be controlled. The FET also works with varying gate-source voltage in the reverse direction, allowing it to operate in nonlinear applications.

The FDMS7558S is best suited for use in applications that require high performance, such as high-frequency and high-power types of applications. It can also be used in battery-operated devices and power management systems. It is suited for use in a wide range of applications, such as audio amplifiers, power supplies, DC-DC converters and others. The FET is also used in automotive, lighting and communications systems.

The FDMS7558S is a highly reliable and power efficient FET that is capable of handling high voltages and currents. Its low RDS and high impedance characteristics make it a preferred choice for RF and power applications. Its cost effectiveness and ease of integration also makes it a suitable choice for a variety of uses. Overall, the FDMS7558S provides excellent performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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