| Allicdata Part #: | FDMS7580TR-ND |
| Manufacturer Part#: |
FDMS7580 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 15A POWER56 |
| More Detail: | N-Channel 25V 15A (Ta), 29A (Tc) 2.5W (Ta), 27W (T... |
| DataSheet: | FDMS7580 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 27W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 13V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 29A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMS7580 is a high-voltage power metal-oxide-semiconductor field-effect transistors (MOSFET) designed to provide high-power switch applications in a variety of fields. It combines the performance of a MOSFET with the superior independence and superior forward and reverse current capabilities of its source and drain regions. It is fabricated with advanced power voltage technology enabling additional features such as thermal resistance and low on-state resistance. The device can be equipped with an improved thermal-resistant package, allowing it to operate at higher temperatures. This makes it suitable for use in extreme temperature applications.
The FDMS7580 has a wide operating temperature range of -65°C to 175°C, making it suitable for use in a variety of applications in different environments. It is able to withstand high voltages up to 800 V, making it suitable for applications that require high-power switching. Additionally, the FDMS7580 has an impressive power dissipation rating of up to 21 W, allowing it to control high power applications without sacrificing efficiency. Furthermore, its low on-state resistance results in low power loss and superior switching capability.
The operating principle of the FDMS7580 is based on the MOSFET structure. It consists of a gate, a source, a drain and a channel region. The channel region is an insulating dielectric, made of silicon dioxide. The channel permits the flow of electrons from the source to the drain, providing the main conductive path in the device. When a suitable voltage is applied to the gate, the electric field due to it will attract electrons towards the channel region. This allows current to flow, and creates an on-state resistance. In the off-state, the electric field at the gate is insufficient to attract electrons, and current flow is blocked.
Due to its high power and low on-state resistance, the FDMS7580 is an ideal choice for high power applications such as power supplies and motor control circuits. The device is capable of handling high current levels and providing low power loss, improving efficiency and reducing costs. Additionally, its wide temperature range and robust construction make it suitable for prolonged usage in extreme temperature environments.
The FDMS7580 is a single, MOSFET power device designed for high power applications and operating from a wide temperature range. Its low on-state resistance and high power dissipation allow it to operate efficiently in demanding environments with high current levels and provide superior switching performance. Thanks to its superior isolation, it is also suitable for applications that require high-power switching and are subject to high voltages.
The specific data is subject to PDF, and the above content is for reference
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FDMS7580 Datasheet/PDF