![FDMS7650DC Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
FDMS7650DC Discrete Semiconductor Products |
|
Allicdata Part #: | FDMS7650DCTR-ND |
Manufacturer Part#: |
FDMS7650DC |
Price: | $ 1.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 47A POWER56 |
More Detail: | N-Channel 30V 47A (Ta), 100A (Tc) 3.3W (Ta), 125W ... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 1.04067 |
Specifications
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Dual Cool™56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14765pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 206nC @ 10V |
Series: | Dual Cool™, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 0.99 mOhm @ 36A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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The FDMS7650DC is a state-of-the-art MOSFET device, designed for applications requiring superior power efficiency. This device is a single, depletion-mode MOSFET that offers very high power efficiency and low Rds(on) in a small footprint. It has been designed to reduce the power consumption and increase the performance of applications such as notebooks, cellular phones, and consumer devices.The FDMS7650DC features a special P and N channel structure which reduces the turn-on and turn-off times as compared to other MOSFETs. This allows the device to operate at higher frequencies with less power consumption. In addition, the low Rds(on) of the FDMS7650DC allows it to be used in high-power applications such as power switches and motor control.The FDMS7650DC is designed for use in 2.8V-5.5V systems, and is capable of operating at frequencies up to 3GHz. It has a low on-resistance of 5.2Ω @ 5V and a junction temperature range of -55°C to +125°C. The device is also capable of delivering high peak currents of up to 300A in pulse mode.The FDMS7650DC has a wide range of applications, from portable devices to larger electric equipment. It is particularly suitable for applications where low power consumption is crucial. Some of the more common applications include portable computers, cellular phones, digital signal processing (DSP) applications, motor control circuits, and power switching.The FDMS7650DC has several unique design features that differentiate it from other transistors such as the low on-resistance, high efficiency, and wide temperature range. The FDMS7650DC is also well suited for applications with high peak current requirements.The FDMS7650DC is designed around a silicon-on-insulator (SOI) process, which enables it to reduce the gate charge loss. This reduces the total gate charge, and the power consumed. This device also uses a low-threshold voltage that enhances switching characteristics and reduces gate charge. The device also has a unique structure which minimizes the power dissipation and reduces the overall power consumption.The FDMS7650DC also features an advanced multi-threshold voltage design which results in a reduction of gate lag current. This reduces switching losses and increases system efficiency.The FDMS7650DC has excellent capabilities when compared to other power MOSFETs. It can handle high peak currents, has excellent on-resistance values, and offers a wide temperature range with very low leakage current. It is also easy to design with, and offers a wide range of circuit designs.Overall, the FDMS7650DC is a powerful, efficient, and reliable device that is perfect for applications requiring low power consumption. With its excellent characteristics and design features, the FDMS7650DC is well-suited for use in high-performance as well as mobile applications.
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