| Allicdata Part #: | FDMS7682TR-ND |
| Manufacturer Part#: |
FDMS7682 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 22A POWER56 |
| More Detail: | N-Channel 30V 16A (Ta), 22A (Tc) 2.5W (Ta), 33W (T... |
| DataSheet: | FDMS7682 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1885pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 22A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDMS7682 Application Field and Working Principle
The FDMS7682 Dual N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) is an ideal candidate for a wide range of switch applications, from low-voltage gate drive applications to liquid-cooled power supply reach-through systems. The wide forward-biasing range makes the device suitable for a variety of different applications. The FDMS7682 utilizes an efficient and versatile integrated circuit design that allows for the device to switch quickly, thereby improving the overall system response time.
Functionality
The FDMS7682 features an integrated gate driver, which provides the needed protection and control to switch the MOSFET quickly and accurately. The integrated gate driver is capable of providing various impedance levels, which allows for controlling the current flow, as well as a very short switching time, which improves the overall system response time. The FDMS7682 also features high current-handling ability, allowing for the device to switch large power loads. Additionally, the device is designed for low on-resistance, which reduces the power consumption of the device and minimizes power loss.
Structure
The FDMS7682 is built with a specialized N-type structure. This structure design provides a single channel of conduction that can be used to effectively regulate and switch power. Additionally, the N-type structure allows for the device to have a low ON-resistance, which helps to reduce power consumption and can also provide a steady state of operation. Additionally, the device utilizes a specialized dielectric material in order to maintain the desired electrical properties, as well as protect against moisture and corrosion.
Applications
The FDMS7682 is well-suited for a wide range of applications, from low-voltage gate drive applications to liquid-cooled power supply reach-through systems. Additionally, the device is also ideal for applications where a fast switching speed is needed, such as with high-end gaming systems and automotive applications. The FDMS7682 is also suitable for energy storage applications, where it can be used to quickly and accurately adjust the voltage of a device, as well as smart grid applications.
Conclusion
The FDMS7682 is an ideal candidate for a wide range of switch applications, due to its wide forward-biasing range, short switching time, efficient integrated circuit design, and low on-resistance. Additionally, the device is well-suited for high-end gaming systems, automotive applications, energy storage, and smart grid applications. Ultimately, the FDMS7682 is an excellent choice for regulating and switching power in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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FDMS7682 Datasheet/PDF