FDMS8558S

Vgs(th) (Max) @ Id:	2.2V @ 1mA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 78W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5118pF @ 13V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	81nC @ 10V
Series:	PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs:	1.5 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	33A (Ta), 90A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDMS8558S Application Field and Working Principle

The FDMS8558S is a low-threshold, logic-level, N-channel, metal-oxide-semiconductor field-effect transistor (MOSFET). It is used in high-speed switching applications, power amplification, and converted motor control. As a logic-level device, it provides high efficiency when used in low voltage circuits.

FDMS8558S Field of Application

The FDMS8558S is mainly used in amplifying or switching audio signals or other digital signals. It can also be used in power conversion circuits, such as DC-DC converters, and in motor control circuits. It is typically found in consumer electronics such as cell phones, laptops, and televisions.The FDMS8558S is ideal for applications with low voltage inputs, since it is designed to turn on and off quickly in these conditions. This is because it has a very low threshold of 1V, which allows it to switch off in low-voltage circumstances.

FDMS8558S Working Principle

The FDMS8558S works on the principle of a transistor and uses an N-type semiconductor substrate. This means it can control the flow of electrical current from one point to another. The way it works is it uses a voltage-sensing gate to manage the flow of electrons. The gate has two distinct parts, one part makes the electrons flow, this is called the source, and the other side of the gate is the drain and it keeps the electrons from flowing.When a voltage is applied to the gate, it produces an electrical field which attracts the electrons into the source. This creates a current in the transistor, which is then amplified and sent to the load. The voltage necessary to produce the gate\'s field is called the threshold voltage and it what determines the threshold voltage of the transistor.The FDMS8558S MOSFET has a low 1V threshold voltage and a maximum drain-source voltage of 30V. This means it can be used in many applications such as high-speed switching of currents up to 30V.

Conclusion

The FDMS8558S MOSFET is an ideal device for low-voltage, low-power applications in which fast switching is required. It has a low 1V threshold voltage which allows it to switch off quickly in low-voltage situations. It can be used for amplifying audio or digital signals, motor control, power conversion circuits, and other applications.

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