| Allicdata Part #: | FDMS8558SDCTR-ND |
| Manufacturer Part#: |
FDMS8558SDC |
| Price: | $ 1.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 33A 8-PQFNN-Channel 25V 38A (Ta), ... |
| More Detail: | N/A |
| DataSheet: | FDMS8558SDC Datasheet/PDF |
| Quantity: | 5885 |
| 1 +: | $ 1.27000 |
| 10 +: | $ 1.23190 |
| 100 +: | $ 1.20650 |
| 1000 +: | $ 1.18110 |
| 10000 +: | $ 1.14300 |
| Series: | PowerTrench®, SyncFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5118pF @ 13V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2.5W (Ta), 89W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Dual Cool™56 |
| Package / Case: | 8-PowerTDFN |
| Base Part Number: | -- |
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fdMS8558SDC is a single-gate FET (Field-Effect Transistor) with a silicon dioxide (also known as SiO2) gate insulation. Unlike regular transistors which are made of two or three layers of semiconductor material, the single-gate FET has a single layer of semiconductor material. The single-gate FET also has a thicker insulation layer than the multi-gate FETs.The layer of SiO2 gate insulation used in the single-gate FET is made thicker than in other transistors. This is because the SiO2 layer must be thick enough to provide the required transistor performance, which depends on the size of the transistor. A thicker insulation layer allows a greater range of voltages to be applied to the transistor, thus providing the higher performance levels necessary for more complex applications.
FdMS8558SDC is well-suited for analog signal applications because of its low level of noise and fast switching speed. It is also used in digital logic circuits as a switching device. The single-gate FETs smaller size makes it ideal for modern, high-density integrated circuits. The single-gate FET works by creating a channel between the source and the drain by applying a voltage to the gate. This voltage creates a field which attracts electrons and forms a conducting channel between the source and the drain. This channel acts as a resistor to the current flowing between the source and the drain. This ability to control the current flow allows the FET to be used in analog signal applications.For digital logic applications, the single-gate FET can either act as an amplifier or a switch. In the amplifier configuration, the FET will amplify an input signal and output an amplified output signal. In the switch configuration, the FET is used to switch a signal on and off in digital logic circuits.The single-gate FET is widely used in a variety of applications, such as analog signal amplifiers, switched-mode power supplies, telecom circuits and even advanced computer architectures. Its fast switching speeds and low levels of noise make it suitable for many different applications.
The specific data is subject to PDF, and the above content is for reference
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FDMS8558SDC Datasheet/PDF