FDMS8558SDC Allicdata Electronics
Allicdata Part #:

FDMS8558SDCTR-ND

Manufacturer Part#:

FDMS8558SDC

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 33A 8-PQFN
More Detail: N-Channel 25V 38A (Ta), 90A (Tc) 2.5W (Ta), 89W (T...
DataSheet: FDMS8558SDC datasheetFDMS8558SDC Datasheet/PDF
Quantity: 6000
1 +: $ 1.27000
10 +: $ 1.23190
100 +: $ 1.20650
1000 +: $ 1.18110
10000 +: $ 1.14300
Stock 6000Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: Dual Cool™56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5118pF @ 13V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Series: PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 90A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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fdMS8558SDC is a single-gate FET (Field-Effect Transistor) with a silicon dioxide (also known as SiO2) gate insulation. Unlike regular transistors which are made of two or three layers of semiconductor material, the single-gate FET has a single layer of semiconductor material. The single-gate FET also has a thicker insulation layer than the multi-gate FETs.The layer of SiO2 gate insulation used in the single-gate FET is made thicker than in other transistors. This is because the SiO2 layer must be thick enough to provide the required transistor performance, which depends on the size of the transistor. A thicker insulation layer allows a greater range of voltages to be applied to the transistor, thus providing the higher performance levels necessary for more complex applications.

FdMS8558SDC is well-suited for analog signal applications because of its low level of noise and fast switching speed. It is also used in digital logic circuits as a switching device. The single-gate FETs smaller size makes it ideal for modern, high-density integrated circuits. The single-gate FET works by creating a channel between the source and the drain by applying a voltage to the gate. This voltage creates a field which attracts electrons and forms a conducting channel between the source and the drain. This channel acts as a resistor to the current flowing between the source and the drain. This ability to control the current flow allows the FET to be used in analog signal applications.For digital logic applications, the single-gate FET can either act as an amplifier or a switch. In the amplifier configuration, the FET will amplify an input signal and output an amplified output signal. In the switch configuration, the FET is used to switch a signal on and off in digital logic circuits.The single-gate FET is widely used in a variety of applications, such as analog signal amplifiers, switched-mode power supplies, telecom circuits and even advanced computer architectures. Its fast switching speeds and low levels of noise make it suitable for many different applications.

The specific data is subject to PDF, and the above content is for reference

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