FDMS86152 Allicdata Electronics
Allicdata Part #:

FDMS86152TR-ND

Manufacturer Part#:

FDMS86152

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 14A POWER56
More Detail: N-Channel 100V 14A (Ta), 45A (Tc) 2.7W (Ta), 125W ...
DataSheet: FDMS86152 datasheetFDMS86152 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDMS86152 application field and working principle

The FDMS86152 is a dual power MOSFET. It is typically used in applications such as switching power supplies, motor control and other applications that require a high power, low on/off resistance, low capacitance and low switching times. It offers a range of features including high current rating, low switching times, and low on/off resistance.

Applications

The FDMS86152 MOSFET is mainly used for current control in high power applications. It can be used as a switch in power supplies, motor drives, and other applications requiring high speed and large current handling capabilities. It is also used in DC-DC converters, power inverters, and motor control. In addition, it can be used in high voltage applications, such as voltage regulators and high voltage power supplies.

Working Principle

The FDMS86152 is a dual power MOSFET. It is typically used in applications such as switching power supplies, motor control and other applications that require a high power, low on/off resistance, low capacitance and low switching times. The MOSFET has two metal-oxide-semiconductor (MOS) transistors inside. Each transistor is formed by a source, gate, and drain. The source is where the electrons enter the device, and the drain is the source\'s opposite end. The gate is the input terminal, where the user applies a certain electric field to either turn on or turn off electric current between the source and the drain. This is referred to as a charge transfer mechanism.

In the OFF state, the gate electric field is zero, so no electrons can transfer between the source and the drain. This keeps the current low and reduces power consumption. When the user applies a certain electric field across the gate, it creates an electric field between the source and the drain, so that the electrons can flow from the source to the drain. This allows the user to control current intensity, depending on the magnitude of electric field applied.

Advantages

The FDMS86152 has many advantages, including low on/off resistance, low capacitance, and high current rating. It is also capable of switching from OFF to ON in less than 1μs. It doesn’t generate large amounts of heat, and its power dissipation is relatively low. Furthermore, the device is quite small and lightweight, which makes it suitable for applications with limited space.

Disadvantages

One of the main drawbacks of the FDMS86152 is its high-voltage threshold. This means that the device must be operated at a much higher voltage than other MOSFET. This also means that a large gate driver circuit is required to drive the gate which increases system complexity. Another disadvantage is that the device is not suitable for applications which require a low temperature operation, as it has a relatively high temperature coefficient.

Conclusion

The FDMS86152 is a dual power MOSFET which is ideal for switching power supplies, motor control and other applications that require a high power, low on/off resistance, low capacitance and low switching times. It has many advantages, including low power dissipation, high current rating, and fast switching times. A drawback of the device is its high-voltage threshold and its relatively high temperature coefficient.

The specific data is subject to PDF, and the above content is for reference

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