FDMS86183

Vgs(th) (Max) @ Id:	4V @ 90µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6), Power56
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	63W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1515pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 6V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	12.8 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	51A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to FDMS86183

FDMS86183 is a high-performance monolithic field-effect transistor (FET) with superior switching and protection characteristics. It\'s made up of a MOSFET in a single package, which is smaller and easier to handle than the standard field-effect transistors (FETs). It offers the ultimate reliability and performance, improving performance over traditional FETs.

Application of FDMS86183

The FDMS86183 is used in a wide range of applications due to its superior switching and protection characteristics. Its flexibility and high-performance makes it ideal for digital circuits, relays, switches, sensors, linear amplifiers, and switching regulators. It is used in devices of all sizes, from mobile phones to small laptops, and it is also a popular choice in automated industrial and manufacturing systems due to its low power requirements and small size.

Features of FDMS86183

The FDMS86183 has a variety of features that make it the perfect choice for many applications.• Low Input Capacitance: The FDMS86183 has a low input capacitance of around 3 fF, meaning that it requires less energy than standard FETs for switching. This makes it perfect for high-speed circuits.• High Slew Rate: The FDMS86183 has an incredibly fast slew rate, meaning that it is able to react quickly to changes in the supply voltage. This makes it great for applications with changing loads, such as motors and pumps.• Low On-State Resistance: The FDMS86183 has a very low on-state resistance, making it ideal for applications with high current currents. This reduces the power consumption of the device and makes it the perfect choice for automotive, industrial and digital applications.• High Current Drive: The FDMS86183 has a very high current drive rating, allowing it to handle high current peaks without affecting the overall device performance. This makes it great for power systems that require higher current levels.• Immunity to ESD: The FDMS86183 has an extremely high electrostatic discharge immunity, meaning that it will not be affected by electrostatic discharge or other high-energy signals. This makes it just as reliable as regular FETs and much less likely to suffer from unintended consequences.

Working Principle of FDMS86183

The FDMS86183 uses a MOSFET in a single package for superior switching characteristics. MOSFETs are made up of three semi-conducting layers sandwiched between two metal layers, and when voltage is applied to the gate terminal of the MOSFET, the current between the source and drain terminals increases or decreases depending on the voltage.A MOSFET has a low input capacitance, meaning that it requires less energy than a standard FET to switch, making it ideal for digital circuits.The immunity to static discharge of the FDMS86183 is thanks to its voltage-regulated gate-threshold voltage, meaning that it won\'t be affected by high-energy signals.The design of the FDMS86183 also allows it to have a much higher current capacity, meaning that it can handle high current peaks without affecting its performance.Finally, the FDMS86183 has a very low on-state resistance, which reduces the power consumption of the device and makes it the perfect choice for power-sensitive applications.

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