FDMS86201 Allicdata Electronics
Allicdata Part #:

FDMS86201TR-ND

Manufacturer Part#:

FDMS86201

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 120V POWER56
More Detail: N-Channel 120V 11.6A (Ta), 35A (Tc) 2.5W (Ta), 104...
DataSheet: FDMS86201 datasheetFDMS86201 Datasheet/PDF
Quantity: 9000
1 +: $ 0.54400
10 +: $ 0.52768
100 +: $ 0.51680
1000 +: $ 0.50592
10000 +: $ 0.48960
Stock 9000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 60V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 11.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 120V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS86201 is a single source high-voltage N-channel metal-oxide-semiconductor field effect transistor (MOSFET). It is designed for high performance in power distribution circuits, as well as in audio and motor control applications. The FDMS86201 is capable of operating under high temperatures and pressure, making it well-suited to harsh industrial environments.

The FDMS86201 MOSFET consists of an insulated gate, along with a drain and source terminal. The device is rated for peak drain-to-source voltage of up to 500V, and can handle peak current up to 105A. The device is encapsulated in a standard TO-220 package, and is available in a variety of different channel length and widths.

The FDMS86201 is well-suited to power distribution, audio and motor control applications due to its high power handling capabilities and its ability to operate under harsh environmental conditions. The MOSFET is typically used in switching circuits, where it is used to control the flow of electricity. It is also used in audio circuits, where it is used to control the amplitude of sound signals.

The working principle of the FDMS86201 MOSFET is that a voltage applied to the gate terminal allows the current to flow between the drain and source terminals. When a voltage is applied to the gate, a conducting layer is formed between the drain and source terminals which allows current to flow. Applying a negative voltage to the gate reduces or eliminates the conducting layer and prevents current from flowing.

The N-channel selection of the FDMS86201 is ideal for switching applications due to its fast switching speed and low capacitive charge. The device also offers enhanced protection against overcurrent and electrostatic discharge (ESD). The combination of high peak current, fast switching speed and ultra-low on-state resistance makes this device ideal for motor control applications.

The FDMS86201 is a high-performance, single-source, N-channel metal-oxide-semiconductor field effect transistor (MOSFET). It is capable of handling up to 500V and 105A peak current, making it well-suited to power distribution, audio and motor control applications. The FDMS86201 is an ideal choice for switching circuits, due to its fast switching speed and low capacitive charge. The device also offers an enhanced level of protection against overcurrent and ESD events.

The specific data is subject to PDF, and the above content is for reference

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