FDMS86252L

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The FDMS86252L is a dual N-channel Trench MOSFET device with advanced process technology, designed to provide high side and low side switching capability to power distributed electronic loads. This device uses a high voltage trench construction with a monolithically integrated copper (CU) drain contact. The FDMS86252L offers superior RDS(ON) over temperature and provides differential on resistance (RON) of 60 mΩ at 3.3V.

The application field of FDMS86252L MOSFET includes automotive, light industrial, commercial and consumer applications. Its broad range of features make it well suited for powering motor drivers, high voltage hot-swap systems, smart battery charging and sub-ohm power distribution. FDMS86252L MOSFET is also suitable for low voltage battery driven applications, where low on-resistance and fast switching performance are required. The FDMS86252L has a maximum operating junction temperature of 175°C, allowing use in harsh environments.

The working principle of FDMS86252L MOSFET is based on the standard MOSFET structure, which consists of source, drain and gate. It has two gate electrodes, namely gate source and gate drain. The voltage between the gate source and the gate drain is used to control the current flow between the source and the drain. Applying a positive voltage to the gate source will create an electric field which induces a depletion region between the gate source and the drain and shut off the current flow.

The FDMS86252L MOSFET also has two other terminals, the body source and the body drain, which is commonly connected to the source voltage. This connection is important for the proper operation of the device, as it serves as a ground for the gate source and the gate drain. Furthermore, this connection also provides a return path for the current flowing through the body source and drain.

The FDMS86252L MOSFET can be used for switching applications, such as power distribution, motor drivers and sub-ohm power distribution. It also has a wide range of features, such as low on-resistance, fast switching and a maximum operating junction temperature of 175°C.

In addition to its switching applications, the FDMS86252L MOSFET is also suitable for power conversion applications. Due to its low on-resistance, the FDMS86252L can be used in switched mode power supplies, DC/DC converters and AC/DC converters. It also provides good load regulation and protection against current surges.

In conclusion, the FDMS86252L is a versatile, low on-resistance dual N-channel Trench MOSFET device that is suitable for use in a wide range of applications. It offers superior RDS(ON) over temperature and is able to provide fast switching and protection against current surges. With these features, it is well suited for power distribution, motor drivers, switched mode power supplies, DC/DC converters and AC/DC converters.

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