Allicdata Part #: | FDMS86369-F085TR-ND |
Manufacturer Part#: |
FDMS86369-F085 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 65A POWER56 |
More Detail: | N-Channel 80V 65A (Tc) 107W (Tc) Surface Mount Pow... |
DataSheet: | FDMS86369-F085 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.40704 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Power56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2470pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMS86369-F085 is a single enhanced form of Field Effect Transistor (FET), more specifically an Enhancement Mode Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It can be considered as a switch, allowing current to flow from one side to the other when voltage is applied to the gate. The F085 can be used in a variety of different applications, including control of power outputs, amplifiers, and interface circuits.
The FDMS86369-F085 is ideal for use as a switch in power outputs, as it is capable of handling a maximum drain-source voltage of 80V and an output current of 155A, making it highly durable and suitable for switching large amounts of current in high power applications. Additionally, the F085 features an on-resistance of only 0.2 ohms, allowing it to draw a minimal amount of current to operate, and making it highly efficient.
The F085 is also suitable for use as an amplifier, as it has excellent performance with a high output impedance and a high input capacitance that allows for efficient amplification. Its low on-resistance also allows for high gain and low distortion, making it ideal for audio applications. Additionally, its low noise characteristics make it well suited for low-noise amplification.
Finally, the FDMS86369-F085 can be used in interface circuits, as it has an extremely low input capacitance of 0.3 pF. This makes it ideal for connecting sensors and other peripherals to a general-purpose input/output (GPIO) port. Furthermore, it is also suitable for use in touchscreens and other high-speed communication interface systems due to its low current consumption.
The working principle of the FDMS86369-F085 is quite simple. When a voltage is applied to the gate, the transistor starts to conduct. This current creates a channel between the source and drain, allowing current to flow from one side to the other. When the gate voltage is removed, the transistor stops conducting and the current stops flowing, effectively switching the device off.
The FDMS86369-F085 is an extremely useful and versatile device, offering the potential for a wide range of applications. It is capable of handling a large amount of power, making it highly suitable for switching power outputs and amplifiers, whilst also being able to provide low-noise performance for audio applications and high speed communication for interface circuits. Furthermore, its low input capacitance and on-resistance make it highly efficient, allowing it to draw a minimal amount of current when active.
The specific data is subject to PDF, and the above content is for reference
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